Browsing by Author "Ho, V. X."

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    Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
    Ho, V. X.; Dao, T. V.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.; McGill, S. A.; Vinh, N. Q. (Springer Nature, 2017-01-05)
    We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 mu m upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN: Er epilayers as an optical gain medium at 1.54 mu m.