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Browsing by Author "Kang, Yuhong"

Now showing 1 - 7 of 7
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    Calculations and Measurements of Raman Gain Coefficients of Different Fiber Types
    Kang, Yuhong (Virginia Tech, 2002-12-09)
    Fiber Raman amplification using the transmission line is a promising technology to increase the repeater distance as well as the capacity of the communication systems. Because of the growing importance of fiber Raman amplification, it is desired to predict the magnitude and shape of the Raman gain spectrum from the doping level and refractive index profiles of different fiber designs. This thesis develops a method to predict the Raman gain coefficients and spectra for a pure silica core fiber and two different types of GeO2-doped silica fibers given their index profiles. An essential feature of the model is the inclusion of the variation in Raman gain coefficient over the mode field due to the variation in the Ge concentration across the fiber core. The calculated Raman gain coefficients were compared with measurements of the peak Raman gain on a step-index GeO2-doped fiber and with published measurements from various sources. Agreement between the calculated and measured peak gain for the step-index fiber was excellent. There was qualitative agreement with published measurements but there were significant differences between the calculated and published gain coefficients, which are not understood. Part of the work sought a way of predicting Raman gain coefficients from a standard gain curve given only the fiber type and the effective area. This approach appears promising for moderately-doped fibers with the proper choice of effective area.
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    Development of a Flexible Integrated Self-Calibrating MEMS Pressure Sensor Using a Liquid-to-Vapor Phase Change
    Kang, Yuhong; Mouring, Scott; de Clerck, Albrey; Mao, Shuo; Ng, Wing; Ruan, Hang (MDPI, 2022-12-12)
    Self-calibration capabilities for flexible pressure sensors are greatly needed for fluid dynamic analysis, structure health monitoring and wearable sensing applications to compensate, in situ and in real time, for sensor drifts, nonlinearity effects, and hysteresis. Currently, very few self-calibrating pressure sensors can be found in the literature, let alone in flexible formats. This paper presents a flexible self-calibrating pressure sensor fabricated from a silicon-on-insulator wafer and bonded on a polyimide substrate. The sensor chip is made of four piezoresistors arranged in a Wheatstone bridge configuration on a pressure-sensitive membrane, integrated with a gold thin film-based reference cavity heater, and two thermistors. With a liquid-to-vapor thermopneumatic actuation system, the sensor can create precise in-cavity pressure for self-calibration. Compared with the previous work related to the single-phase air-only counterpart, testing of this two-phase sensor demonstrated that adding the water liquid-to-vapor phase change can improve the effective range of self-calibration from 3 psi to 9.5 psi without increasing the power consumption of the cavity micro-heater. The calibration time can be further improved to a few seconds with a pulsed heating power.
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    Dual-Use Strain Sensors for Acoustic Emission and Quasi-Static Bending Measurements
    Stiefvater, Jason; Kang, Yuhong; de Clerck, Albrey; Mao, Shuo; Jones, Noah; Deem, Josh; Wicks, Alfred; Ruan, Hang; Ng, Wing (MDPI, 2024-03-02)
    In this paper, a MEMS piezoresistive ultrathin silicon membrane-based strain sensor is presented. The sensor’s ability to capture an acoustic emission signal is demonstrated using a Hsu–Nielsen source, and shows comparable frequency content to a commercial piezoceramic ultrasonic transducer. To the authors’ knowledge, this makes the developed sensor the first known piezoresistive strain sensor which is capable of recording low-energy acoustic emissions. The improvements to the nondestructive evaluation and structural health monitoring arise from the sensor’s low minimum detectable strain and wide-frequency bandwidth, which are generated from the improved fabrication process that permits crystalline semiconductor membranes and advanced polymers to be co-processed, thus enabling a dual-use application of both acoustic emission and static strain sensing. The sensor’s ability to document quasi-static bending is also demonstrated and compared with an ultrasonic transducer, which provides no significant response. This dual-use application is proposed to effectively combine the uses of both strain and ultrasonic transducer sensor types within one sensor, making it a novel and useful method for nondestructive evaluations. The potential benefits include an enhanced sensitivity, a reduced sensor size, a lower cost, and a reduced instrumentation complexity.
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    Mechanisms, Conditions and Applications of Filament Formation and Rupture in Resistive Memories
    Kang, Yuhong (Virginia Tech, 2015-11-13)
    Resistive random access memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high switching speed, and good retention and endurance properties. However, due to the current limited understanding of the device mechanism, RRAMs research are still facing several issues and challenges including instability of operation parameters, the relatively high reset current, the limited retention and the unsatisfactory endurance. In this study, we investigated the switching mechanisms, conditions and applications of oxygen vacancy (Vo) filament formation in resistive memories. By studying the behavior of conductive Vo nanofilaments in several metal/oxide/metal resistive devices of various thicknesses of oxides, a resulting model supported by the data postulates that there are two distinct modes of creating oxygen vacancies: i) a conventional bulk mode creation, and ii) surface mode of creating oxygen vacancies at the active metal-dielectric interface. A further investigation of conduction mechanism for the Vo CF only based memories is conducted through insertion of a thin layer of titanium into a Pt/ Ta2O5/Pt structure to form a Pt/Ti/ Ta2O5/Pt device. A space charge limited (SCL) conduction model is used to explain the experimental data regarding SET process at low voltage ranges. The evidence for existence of composite copper/oxygen vacancy nanofilaments is presented. The innovative use of hybrid Vo/Cu nanofilament will potentially overcome high forming voltage and gas accumulation issues. A resistive floating electrode device (RFED) is designed to allow the generation of current/voltage pulses that can be controlled by three independent technology parameters. Our recent research has demonstrated that in a Cu/TaOx/Pt resistive device multiple Cu conductive nanofilaments can be formed and ruptured successively. Near the end of the study, quantized and partial quantized conductance is observed at room temperature in metal-insulator-metal structures with graphene submicron-sized nanoplatelets embedded in a 3-hexylthiophene (P3HT) polymer layer. As an organic memory, the device exhibits reliable memory operation with an ON/OFF ratio of more than 10.
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    Numerical Study of the Thermal Performance of a Mems Pressure Sensor with Self-Calibration Capabilities
    de Clerck, Albrey; Kang, Yuhong; Sibold, Ridge; Mouring, Scott; Ruan, Hang; Ng, Wing (MDPI, 2022-05-18)
    Recent industry trends toward more complex and interconnected systems have increased the demand for more reliable pressure sensors. By integrating a microactuator with a pressure sensor, the sensor can self-calibrate, eliminating the complexities and costs associated with traditional sensor calibration methods to ensure reliability. The present work is focused on furthering understanding and improving the thermal performance of a thermopneumatic actuated self-calibrating pressure sensor. A transient numerical model was developed in ANSYS and was calibrated using experimental testing data. The numerical model provided insights into the sensor’s performance not previously observed in experimental testing. Furthermore, the model was utilized for two design studies. First, it was found that a substrate with low thermal conductivity and high thermal diffusivity is ideal for both the sensor’s efficiency and a faster transient response time. The second design study showed that decreasing the size of the sealed reference cavity lowers power consumption and transient response time. The study also showed that reducing the cavity base dimension has a greater effect on lowering power consumption and response time. Overall, the present work increases understanding of the self-calibrating pressure sensor and provides insight into potential design improvements, moving closer to optimized self-calibrating pressure sensors.
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    Observation of Quantized and Partial Quantized Conductance in Polymer- Suspended Graphene Nanoplatelets
    Kang, Yuhong; Ruan, Hang; Claus, Richard O.; Heremans, Jean J.; Orlowski, Marius K. (SpringerOpen, 2016)
    Quantized conductance is observed at zero magnetic field and room temperature in metal-insulator-metal structures with graphene submicron-sized nanoplatelets embedded in a 3-hexylthiophene (P3HT) polymer layer. In devices with medium concentration of graphene platelets, integer multiples of Go = 2e2/h (=12.91 kΩ−1), and in some devices partially quantized including a series of with (n/7) × Go, steps are observed. Such an organic memory device exhibits reliable memory operation with an on/off ratio of more than 10. We attribute the quantized conductance to the existence of a 1-D electron waveguide along the conductive path. The partial quantized conductance results likely from imperfect transmission coefficient due to impedance mismatch of the first waveguide modes.
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    Resistive volatile/non-volatile floating electrode logic/memory cell
    (United States Patent and Trademark Office, 2017-10-17)
    A resistive floating electrode device (RFED) provides a logic cell or non-volatile storage or dynamic or static random access memory on an extremely compact matrix with individual cells scalable to the minimum available lithographic feature size regime by providing atomic switches connected in anti-parallel relationship, preferably with a common inert electrode. Programming is facilitated by limiting current to a compliance current level in order to maintain an OB state from which the cell can be written to either the 0 or 1 state. A perfecting feature of the invention provides for selective operation of a cell as a diode or in a volatile or non-volatile storage mode within the same memory array. A series connection of three or more RFEDs in accordance with the invention having different ON state currents, OFF state currents and reset currents can be used as adaptive, neural or chaotic logic cells.