Browsing by Author "Maximov, Mikhail V."
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- Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristicsZubov, Fedor I.; Zhukov, A. E.; Shernyakov, Y. M.; Maximov, Mikhail V.; Semenova, E. S.; Asryan, Levon V. (IOP, 2015-01-01)It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.
- Improvement of temperature-stability in a quantum well laser with asymmetric barrier layersZhukov, A. E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.; Shernyakov, Y. M.; Maximov, Mikhail V.; Semenova, E. S.; Yvind, K.; Asryan, Levon V. (AIP Publishing, 2012-01-01)We fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference laser structure, our laser with asymmetric barrier layers demonstrates reduced internal optical loss, lower threshold current density at elevated temperatures, and higher characteristic temperature (143 vs. 99K at 20 degrees C). (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676085]
- Lasers with asymmetric barrier layers: A promising type of injection lasersAsryan, Levon V.; Zubov, Fedor I.; Kryzhanovskaya, Natalia V.; Maximov, Mikhail V.; Zhukov, Alexey E. (2016-08)We present an overview of our theoretical and experimental work on a novel type of semiconductor lasers – quantum well (QW) lasers with asymmetric barrier layers (ABLs). Our experimental work supports our theoretical derivations — ABL QW lasers demonstrate superior operating characteristics as compared to conventional QW lasers. In particular, the threshold current is lower and more temperature-stable, the light-current characteristic is more linear, and the wall-plug efficiency is higher in ABL lasers.
- Light-current characteristic of a quantum well laser with asymmetric barrier layersAsryan, Levon V.; Kryzhanovskaya, Natalia V.; Maximov, Mikhail V.; Zubov, Fedor I.; Zhukov, Alexey E. (American Institute of Physics, 2013-10-14)Light-current characteristic (LCC) of a novel type of quantum well (QW) lasers-QW lasers with asymmetric barrier layers (ABLs)-is studied. The ABLs (one on each side of the QW) prevent electrons from entering the hole-injecting side of the structure and holes from entering the electron-injecting side. The use of ABLs thus suppresses the parasitic electron-hole recombination outside the QW and eliminates the mechanism of sublinearity of the LCC in conventional lasers associated with this recombination and with the carrier capture delay into the QW. As a result, no matter how slow is the carrier capture into the QW, the LCC of an ABL QW laser is virtually linear. In an ABL laser containing indent layers between the QW and each of the ABLs (parasitic recombination still occurs in these thin layers), even in the case of slow capture of carriers into the QW, the LCC is also considerably more linear than in a reference conventional QW laser. (C) 2013 AIP Publishing LLC.