Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics
Files
TR Number
Date
2015-01-01
Journal Title
Journal ISSN
Volume Title
Publisher
IOP
Abstract
It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.
Description
Keywords
Technology, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Multidisciplinary, Engineering, Science & Technology - Other Topics, Physics