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dc.contributorVirginia Tech. Department of Materials Engineeringen_US
dc.contributor.authorRao, Satish I.en_US
dc.contributor.authorHouska, Charles R.en_US
dc.date.accessioned2015-05-21T19:47:27Z
dc.date.available2015-05-21T19:47:27Z
dc.date.issued1981
dc.identifier.citationRao, S. I., Houska, C. R. (1981). The measurement of elastic stresses and energy in cubic single‐crystal films by x‐ray diffraction. Journal of Applied Physics, 52(10), 6322-6327. doi: 10.1063/1.328536en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10919/52450
dc.description.abstractAnisotropicelasticity calculations have been made for use in conjunction with strain measurements by x‐ray diffraction for sputtered single‐crystal films. Only the cubic case has been treated. Data from InSb films with (100) and (111) orientations on similarly oriented GaAs substrates are given. It was found that nearly alike planar strains ε yield lower planar stresses σ′ 1 and σ′ 2 and stored energy density U for the (100) orientation. The (100) films exhibit a relatively large strain perpendicular to the film ε3.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) - Grant No. DMR-8000933en_US
dc.format.extent7 pagesen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.subjectElasticityen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectStrain measurementen_US
dc.subjectAnisotropyen_US
dc.subjectSputter depositionen_US
dc.titleThe measurement of elastic stresses and energy in cubic single‐crystal films by x‐ray diffractionen_US
dc.typeArticleen_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/52/10/10.1063/1.328536en_US
dc.date.accessed2015-04-24en_US
dc.title.serialJournal of Applied Physicsen_US
dc.identifier.doihttps://doi.org/10.1063/1.328536
dc.type.dcmitypeTexten_US


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