High temperature electrode-barriers for ferroelectric and other capacitor structures
Desu, Seshu B.
Vijay, Dilip P.
Bhatt, Hemanshu D.
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A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O.sub.x. A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.
Virginia Tech Intellectual Properties, Inc.
Sharp Kabushiki Kaisha
- Virginia Tech Patents