High temperature electrode-barriers for ferroelectric and other capacitor structures
Virginia Tech Intellectual Properties, Inc.
Sharp Kabushiki Kaisha
Desu, Seshu B.
Vijay, Dilip P.
Bhatt, Hemanshu D.
MetadataShow full item record
A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O.sub.x. A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.
- Virginia Tech Patents