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    Method and apparatus for emission lithography using patterned emitter

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    6740895.pdf (449.6Kb)
    Downloads: 44
    Publication Date
    2004-05-25
    Filing Date
    2001-05-29
    Inventor
    Yoo, In-kyeong
    Metadata
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    Abstract
    A method and apparatus for emission lithography using a patterned emitter wherein, in the apparatus for emission lithography, a pyroelectric emitter or a ferroelectric emitter is patterned using a mask and it is then heated. Upon heating, electrons are not emitted from that part of the emitter covered by the mask, but are emitted from the exposed part of the emitter not covered by the mask so that the shape of the emitter pattern is projected onto the substrate. To prevent dispersion of emitted electron beams, which are desired to be parallel, the electron beams are controlled using a magnet, a direct current magnetic field generator or a deflection system, thereby achieving an exact one-to-one projection or an exact x-to-one projection of the desired pattern etched on the substrate.
    Assignee
    SAMSUNG ELECTRONICS CO., LTD.
    Virginia Tech Intellectual Properties, Inc.
    Patent Number
    6740895
    Application Number
    9865607
    Source URL
    http://pimg-fpiw.uspto.gov/fdd/95/408/067/0.pdf
    Primary/U.S. Class
    250/492.24
    Other/U.S. Class
    250/492.2
    CPC Class
    B82Y10/00
    B82Y40/00
    H01J37/3175
    H01J2237/31777
    Patent Type
    utility
    URI
    http://hdl.handle.net/10919/72491
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