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dc.contributor.authorScott, Brian Leeen_US
dc.date.accessioned2017-04-06T15:43:45Z
dc.date.available2017-04-06T15:43:45Z
dc.date.issued2011-09-09en_US
dc.identifier.otheretd-09142011-170900en_US
dc.identifier.urihttp://hdl.handle.net/10919/77206
dc.description.abstractThe production and fabrication of semi-conductor core optical fibers was shown to be feasible and controllable. This was accomplished through the step sequence of fabrication and characterization of 4 fiber types, an experiment on controlling the grain length in the core and a simple model of the heat transfer during fabrication. Fibers were first made with a silicon core, followed by a phosphorous doped n-type silicon core, then a boron doped p-type silicon core, and a tellurium doped n-type gallium antimonide core. Characterization of the fibers was accomplished with energy dispersive spectroscopy (EDS) for compositional analysis, electron backscatter diffraction (EBSD) for crystal orientation and grain size, optical and electron microscopy for physical fiber quality and optical transmission for core optical quality. A model was developed to relate the heat transfer with the grain structure of the fiber core. All of the fibers fabricated had a polycrystalline core with either no detectable oxygen in the case of the silicon fibers or low amounts of oxygen diffusion into the core as in the case of the GaSb fibers. Fiber lengths ranged from 7 cm for the initial silicon fibers to 60 cm and outside diameters down to 100 µm for n and p type silicon fibers. Core diameters for all fiber types ranged from 10 – 200 µm depending on the fabrication parameters. Lengths of major grains in the core are dependent on the core diameter and the pulling speed. The grain lengths of the major grains in the core generally increase in length with an increase in core diameter. Grain lengths in all fibers are thought to be suitable for use in fabrication of electronic structures in the core region with even the smallest average grain length of around 300 µm. This grain structure satisfies the grain boundary requirements for fabrication of boundary free p-n junctions and other more complicated electronic structures. Small core diameter fibers had better physical quality with fewer cracks and longer continuous length than the larger core fibers.
dc.language.isoen_USen_US
dc.publisherVirginia Techen_US
dc.rightsI hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Virginia Tech or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.en_US
dc.subjectGallium Antimonideen_US
dc.subjectSiliconen_US
dc.subjectSilicon Optical Fiber Grain lengthen_US
dc.subjectEBSDen_US
dc.titleSemi-conductor Core Optical Fibers and Fabrication Dependence of the Grain Structureen_US
dc.typeDissertationen_US
dc.contributor.departmentMaterials Science and Engineeringen_US
dc.description.degreePh. D.en_US
thesis.degree.namePh. D.en_US
thesis.degree.leveldoctoralen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
thesis.degree.disciplineMaterials Science and Engineeringen_US
dc.contributor.committeechairPickrell, Gary R.en_US
dc.contributor.committeememberWang, Anboen_US
dc.contributor.committeememberAsryan, Levon V.en_US
dc.contributor.committeememberSuchicital, Carlos T. A.en_US
dc.type.dcmitypeTexten_US
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-09142011-170900/en_US
dc.date.sdate2011-09-14en_US
dc.date.rdate2016-10-18
dc.date.adate2011-09-29en_US


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