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dc.contributorVirginia Tech. Department of Materials Science and Engineeringen
dc.contributor.authorWu, Yuchangen
dc.contributor.authorAsryan, Levon V.en
dc.date.accessioned2017-06-12T19:17:35Zen
dc.date.available2017-06-12T19:17:35Zen
dc.date.issued2014-03-14en
dc.identifier.citationWu, Yuchang, Asryan, Levon V. (2014). Direct and indirect capture of carriers into the lasing ground state and the light-current characteristic of quantum dot lasers. Journal of Applied Physics, 115(10). doi: 10.1063/1.4868472en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/78024en
dc.description.abstractWe calculate the light-current characteristic (LCC) of a quantum dot (QD) laser under the conditions of both direct and indirect capture of carriers from the optical confinement layer into the lasing ground state in QDs. We show that direct capture is a dominant process determining the ground-state LCC. Only when direct capture is slow, the role of indirect capture (capture into the QD excited state and subsequent intradot relaxation to the ground state) becomes important. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipUnited States. Army Research Office - Grant No. W911NF-13-1-0445en
dc.format.extent? - ? (5) page(s)en
dc.languageEnglishen
dc.publisherAmer Inst Physicsen
dc.relation.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000333083100005&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectPhysics, Applieden
dc.subjectPhysicsen
dc.subjectCONFINED ACTIVE-REGIONen
dc.subject1.3 MU-Men
dc.subjectSEMICONDUCTOR-LASERSen
dc.subjectEMISSIONen
dc.subjectSATURATIONen
dc.subjectTHRESHOLDen
dc.subjectDYNAMICSen
dc.subjectGAINen
dc.subjectQuantum dotsen
dc.subjectExcited statesen
dc.subjectGround statesen
dc.subjectCharge injectionen
dc.subjectCurrent densityen
dc.titleDirect and indirect capture of carriers into the lasing ground state and the light-current characteristic of quantum dot lasersen
dc.typeArticle - Refereeden
dc.description.versionPublished (Publication status)en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.title.serialJOURNAL OF APPLIED PHYSICSen
dc.identifier.doihttps://doi.org/10.1063/1.4868472en
dc.identifier.volume115en
dc.identifier.issue10en
dc.identifier.orcidAsryan, LV [0000-0002-2502-1559]en
dc.identifier.sourceurlhttp://scitation.aip.org/content/aip/journal/jap/115/10/10.1063/1.4868472en
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/Materials Science and Engineeringen


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