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    Optical power of semiconductor lasers with a low-dimensional active region

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    2014_Optical_power_semiconductor_lasers.pdf (772.9Kb)
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    Date
    2014-01-14
    Author
    Asryan, Levon V.
    Sokolova, Zinaida N.
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    Abstract
    A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser. (C) 2014 AIP Publishing LLC.
    URI
    http://hdl.handle.net/10919/78025
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    • Scholarly Works, Materials Science and Engineering (MSE) [398]

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