Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface?

dc.contributorVirginia Techen
dc.contributor.authorDi Ventra, M.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:39Zen
dc.date.available2014-04-16T14:16:39Zen
dc.date.issued2001-10en
dc.description.abstractA simple analysis based on the bulk valence and conduction densities of states was employed to estimate the interface-state densities for interfaces between the three most common SiC polytypes (3C, 4H, and 6H) and SiO2. We found that all polytypes had comparable conduction-band interface-state density with silicon dioxide as Si, being higher for the valence band. The conduction-band interface-state density should be higher for 4H-SiC than for 6H-SiC for both the C- or Si-terminated interfaces. On the contrary, the valence-band interface-state density can be either higher or lower for 4H-SiC compared to 6H-SiC according to which atom, C or Si, terminates the interface. The trends suggested by the above model are in agreement with recent mobility measurements in SiC-based field-effect transistors. (C) 2001 American Institute of Physics.en
dc.identifier.citationDi Ventra, M., "Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface?," Appl. Phys. Lett. 79, 2402 (2001); http://dx.doi.org/10.1063/1.1399009en
dc.identifier.doihttps://doi.org/10.1063/1.1399009en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47367en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/79/15/10.1063/1.1399009en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectoxide-semiconductor capacitorsen
dc.subjectthin-film oxidationen
dc.subjectsilicon-carbideen
dc.subjectband-edgesen
dc.subjectprecipitationen
dc.subjectpolytypeen
dc.titleCan we make the SiC-SiO2 interface as good as the Si-SiO2 interface?en
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
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