VTechWorks staff will be away for the Thanksgiving holiday beginning at noon on Wednesday, November 27, through Friday, November 29. We will resume normal operations on Monday, December 2. Thank you for your patience.
 

Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface?

Simple item page
dc.contributorVirginia Techen
dc.contributor.authorDi Ventra, M.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:39Zen
dc.date.available2014-04-16T14:16:39Zen
dc.date.issued2001-10en
dc.description.abstractA simple analysis based on the bulk valence and conduction densities of states was employed to estimate the interface-state densities for interfaces between the three most common SiC polytypes (3C, 4H, and 6H) and SiO2. We found that all polytypes had comparable conduction-band interface-state density with silicon dioxide as Si, being higher for the valence band. The conduction-band interface-state density should be higher for 4H-SiC than for 6H-SiC for both the C- or Si-terminated interfaces. On the contrary, the valence-band interface-state density can be either higher or lower for 4H-SiC compared to 6H-SiC according to which atom, C or Si, terminates the interface. The trends suggested by the above model are in agreement with recent mobility measurements in SiC-based field-effect transistors. (C) 2001 American Institute of Physics.en
dc.identifier.citationDi Ventra, M., "Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface?," Appl. Phys. Lett. 79, 2402 (2001); http://dx.doi.org/10.1063/1.1399009en
dc.identifier.doihttps://doi.org/10.1063/1.1399009en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47367en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/79/15/10.1063/1.1399009en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectoxide-semiconductor capacitorsen
dc.subjectthin-film oxidationen
dc.subjectsilicon-carbideen
dc.subjectband-edgesen
dc.subjectprecipitationen
dc.subjectpolytypeen
dc.titleCan we make the SiC-SiO2 interface as good as the Si-SiO2 interface?en
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
1.1399009.pdf
Size:
225.3 KB
Format:
Adobe Portable Document Format
Description:
Main article
Download

Collections

Scholarly Works, Physics