Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface?
| dc.contributor | Virginia Tech | en |
| dc.contributor.author | Di Ventra, M. | en |
| dc.contributor.department | Physics | en |
| dc.date.accessed | 2014-03-27 | en |
| dc.date.accessioned | 2014-04-16T14:16:39Z | en |
| dc.date.available | 2014-04-16T14:16:39Z | en |
| dc.date.issued | 2001-10 | en |
| dc.description.abstract | A simple analysis based on the bulk valence and conduction densities of states was employed to estimate the interface-state densities for interfaces between the three most common SiC polytypes (3C, 4H, and 6H) and SiO2. We found that all polytypes had comparable conduction-band interface-state density with silicon dioxide as Si, being higher for the valence band. The conduction-band interface-state density should be higher for 4H-SiC than for 6H-SiC for both the C- or Si-terminated interfaces. On the contrary, the valence-band interface-state density can be either higher or lower for 4H-SiC compared to 6H-SiC according to which atom, C or Si, terminates the interface. The trends suggested by the above model are in agreement with recent mobility measurements in SiC-based field-effect transistors. (C) 2001 American Institute of Physics. | en |
| dc.identifier.citation | Di Ventra, M., "Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface?," Appl. Phys. Lett. 79, 2402 (2001); http://dx.doi.org/10.1063/1.1399009 | en |
| dc.identifier.doi | https://doi.org/10.1063/1.1399009 | en |
| dc.identifier.issn | 0003-6951 | en |
| dc.identifier.uri | http://hdl.handle.net/10919/47367 | en |
| dc.identifier.url | http://scitation.aip.org/content/aip/journal/apl/79/15/10.1063/1.1399009 | en |
| dc.language.iso | en_US | en |
| dc.publisher | AIP Publishing | en |
| dc.rights | In Copyright | en |
| dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
| dc.subject | oxide-semiconductor capacitors | en |
| dc.subject | thin-film oxidation | en |
| dc.subject | silicon-carbide | en |
| dc.subject | band-edges | en |
| dc.subject | precipitation | en |
| dc.subject | polytype | en |
| dc.title | Can we make the SiC-SiO2 interface as good as the Si-SiO2 interface? | en |
| dc.title.serial | Applied Physics Letters | en |
| dc.type | Article - Refereed | en |
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