Maximum power of quantum dot laser versus internal loss
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Date
2006-02-01
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Publisher
AIP Publishing
Abstract
Internal loss, which increases with the carrier density outside the active region, causes a rollover of the light-current curve and strongly limits the output power of a diode laser with a single layer of quantum dots. The maximum power is calculated as a steeply decreasing function of internal loss cross section. The use of multiple layers of quantum dots is shown to significantly improve the laser output characteristics.
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Keywords
Confined active-region, Semiconductor-lasers, Well lasers, Optical loss, Threshold, Gain
Citation
Asryan, LV, "Maximum power of quantum dot laser versus internal loss," Appl. Phys. Lett. 88, 073107 (2006); http://dx.doi.org/10.1063/1.2174103