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Maximum power of quantum dot laser versus internal loss

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dc.contributorVirginia Techen
dc.contributor.authorAsryan, Levon V.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:44Zen
dc.date.available2014-04-16T14:16:44Zen
dc.date.issued2006-02-01en
dc.description.abstractInternal loss, which increases with the carrier density outside the active region, causes a rollover of the light-current curve and strongly limits the output power of a diode laser with a single layer of quantum dots. The maximum power is calculated as a steeply decreasing function of internal loss cross section. The use of multiple layers of quantum dots is shown to significantly improve the laser output characteristics.en
dc.description.sponsorshipU.S. Army Research Office under Grant No. W911-NF-05-1-0308en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAsryan, LV, "Maximum power of quantum dot laser versus internal loss," Appl. Phys. Lett. 88, 073107 (2006); http://dx.doi.org/10.1063/1.2174103en
dc.identifier.doihttps://doi.org/10.1063/1.2174103en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47392en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/88/7/10.1063/1.2174103en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectConfined active-regionen
dc.subjectSemiconductor-lasersen
dc.subjectWell lasersen
dc.subjectOptical lossen
dc.subjectThresholden
dc.subjectGainen
dc.titleMaximum power of quantum dot laser versus internal lossen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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