Transport in molecular transistors: Symmetry effects and nonlinearities
dc.contributor | Virginia Tech | en |
dc.contributor.author | Rashkeev, S. N. | en |
dc.contributor.author | Di Ventra, M. | en |
dc.contributor.author | Pantelides, S. T. | en |
dc.contributor.department | Physics | en |
dc.date.accessed | 2014-04-23 | en |
dc.date.accessioned | 2014-05-07T15:37:09Z | en |
dc.date.available | 2014-05-07T15:37:09Z | en |
dc.date.issued | 2002-07 | en |
dc.description.abstract | We report first-principles calculations of the current-voltage and current-gate-field characteristics of model molecular transistors to explore the factors that control current amplification and other properties. We show that both the position and amplitude of resonant peaks are modified by the use of substituents that affect the symmetry and dipole moments of the molecules, and allow a linear versus nonlinear Stark effect. In addition, strong nonlinearities arise at large source-drain currents. | en |
dc.description.sponsorship | DARPA/ONR Grant No. N00014-99-1-0351 | en |
dc.description.sponsorship | National Science Foundation Grant No. DMR-98-03768 | en |
dc.description.sponsorship | Oak Ridge National Laboratory, managed by UT Battelle, LLC, for the U. S. Department of Energy under Contract No. DE-AC05 00OR22725 | en |
dc.description.sponsorship | William A. and Nancy F. McMinn Endowment at Vanderbilt University | en |
dc.identifier.citation | Rashkeev, S. N.; Di Ventra, M.|; Pantelides, S. T., "Transport in molecular transistors: Symmetry effects and nonlinearities," Phys. Rev. B 66, 033301 DOI: http://dx.doi.org/10.1103/PhysRevB.66.033301 | en |
dc.identifier.doi | https://doi.org/10.1103/PhysRevB.66.033301 | en |
dc.identifier.issn | 1098-0121 | en |
dc.identifier.uri | http://hdl.handle.net/10919/47903 | en |
dc.identifier.url | http://journals.aps.org/prb/abstract/10.1103/PhysRevB.66.033301 | en |
dc.language.iso | en_US | en |
dc.publisher | American Physical Society | en |
dc.rights | In Copyright | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
dc.subject | field-effect transistors | en |
dc.subject | conductance | en |
dc.subject | resistance | en |
dc.subject | junctions | en |
dc.subject | device | en |
dc.subject | physics, condensed matter | en |
dc.title | Transport in molecular transistors: Symmetry effects and nonlinearities | en |
dc.title.serial | Physical Review B | en |
dc.type | Article - Refereed | en |
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