Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

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dc.contributor.authorNguyen, Peter D.en
dc.contributor.authorClavel, Michael B.en
dc.contributor.authorGoley, Patrick S.en
dc.contributor.authorLiu, Jheng-Sinen
dc.contributor.authorAllen, Noah P.en
dc.contributor.authorGuido, Louis J.en
dc.contributor.authorHudait, Mantu K.en
dc.date.accessioned2022-02-22T19:53:38Zen
dc.date.available2022-02-22T19:53:38Zen
dc.date.issued2015-07-01en
dc.date.updated2022-02-22T19:53:36Zen
dc.description.abstractStructural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated. Electrical characteristics of N-type metal-oxide-semiconductor (MOS) capacitors, fabricated from the aforementioned material stack are then presented. Simulated and experimental X-ray rocking curves show distinct Ge, AlAs, and GaAs epilayer peaks. Moreover, secondary ion mass spectrometry, energy dispersive X-ray spectroscopy (EDS) profile, and EDS line profile suggest limited interdiffusion of the underlying buffer into the Ge layer, which is further indicative of the successful growth of device-quality epitaxial Ge layer. The Ge MOS capacitor devices demonstrated low frequency dispersion of 1.80% per decade, low frequency-dependent flat-band voltage, VFB , shift of 153 mV, efficient Fermi level movement, and limited C-V stretch out. Low interface state density (Dit) from 8.55 × 1011 to 1.09 × 1012 cm-2 eV-1 is indicative of a high-quality oxide/Ge heterointerface, an effective electrical passivation of the Ge surface, and a Ge epitaxy with minimal defects. These superior electrical and material characteristics suggest the feasibility of utilizing large bandgap III-V buffers in the heterointegration of high-mobility channel materials on Si for future high-speed complementary metal-oxide semiconductor logic applications.en
dc.description.versionAccepted versionen
dc.format.extentPages 341-348en
dc.format.extent8 page(s)en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1109/JEDS.2015.2425959en
dc.identifier.eissn2168-6734en
dc.identifier.issn2168-6734en
dc.identifier.issue4en
dc.identifier.orcidGuido, Louis [0000-0002-5084-3626]en
dc.identifier.orcidHudait, Mantu [0000-0002-9789-3081]en
dc.identifier.urihttp://hdl.handle.net/10919/108821en
dc.identifier.volume3en
dc.language.isoenen
dc.publisherIEEEen
dc.relation.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000369884700006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectEngineering, Electrical & Electronicen
dc.subjectEngineeringen
dc.subjectGermanium (Ge)en
dc.subjectheteroepitaxyen
dc.subjectmetal-oxide semiconductor (MOS) devicesen
dc.subjectsilicon (Si)en
dc.subjectIII-V materialsen
dc.subjectFIELD-EFFECT TRANSISTORSen
dc.subjectSILICONen
dc.subjectDENSITYen
dc.subject1007 Nanotechnologyen
dc.subject0906 Electrical and Electronic Engineeringen
dc.titleHeteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Bufferen
dc.title.serialIEEE Journal of the Electron Devices Societyen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
dc.type.otherArticleen
dc.type.otherJournalen
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/Electrical and Computer Engineeringen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen

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