Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain-Balanced Nonpolar InGaN/AlGaN Quantum Wells

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dc.contributor.authorCao, Yangen
dc.contributor.authorDzuba, Brandonen
dc.contributor.authorMagill, Brenden A.en
dc.contributor.authorSenichev, Alexanderen
dc.contributor.authorTrang Nguyenen
dc.contributor.authorDiaz, Rosa E.en
dc.contributor.authorManfra, Michael J.en
dc.contributor.authorMcGill, Stephenen
dc.contributor.authorGarcia, Carlosen
dc.contributor.authorKhodaparast, Giti A.en
dc.contributor.authorMalis, Oanaen
dc.date.accessioned2022-07-15T12:58:00Zen
dc.date.available2022-07-15T12:58:00Zen
dc.date.issued2022-02-16en
dc.description.abstractTemperature-dependent continuous-excitation and time-resolved photoluminescence are studied to probe carrier localization and recombination in nearly strain-balanced m-plane In0.09Ga0.91N/Al0.19Ga0.81N multi-quantum wells grown by plasma-assisted molecular-beam epitaxy. An average localization depth of 21 meV is estimated for the undoped sample. This depth is much smaller than the reported values in polar structures and m-plane InGaN quantum wells. As part of this study, temperature and magnetic field dependence of time-resolved photoluminescence is performed. At 2 K, an initial fast decay time of approximate to 0.3 ns is measured for both undoped and doped structures. The undoped sample also exhibits a slow decay component with a time scale of 2.2 ns. The existence of two relaxation paths in the undoped structure can be attributed to different localization centers. The fast relaxation decays are relatively insensitive to external magnetic fields, while the slower relaxation time constant decreases significantly with increasing magnetic fields. The fast decay time scale in the undoped sample is likely due to indium fluctuations in the quantum well. The slow decay time may be related to carrier localization in the barriers. The addition of doping leads to a single fast decay time likely due to stronger exciton localization in the InGaN quantum wells.en
dc.description.notesThe authors acknowledge support from the National Science Foundation. Y. C., T. N., and O. M. acknowledge partial support from NSF award DMR-1610893, and DMR-2004462. A. S. and B. D. were supported from NSF award ECCS-1607173. G. A. K. and B. A. M. acknowledge the support from AFOSR under Grant FA9550-17-1-0341. A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by the National Science Foundation Cooperative Agreement No. DMR-1644779 and the State of Florida.en
dc.description.sponsorshipNational Science Foundation [DMR-1644779, DMR-1610893, DMR-2004462, ECCS-1607173]; AFOSR [FA9550-17-1-0341]; State of Floridaen
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1002/pssb.202100569en
dc.identifier.eissn1521-3951en
dc.identifier.issn0370-1972en
dc.identifier.other2100569en
dc.identifier.urihttp://hdl.handle.net/10919/111261en
dc.language.isoenen
dc.publisherWiley-V C Hen
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivatives 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectlocalizationen
dc.subjectnitridesen
dc.subjectphotoluminescenceen
dc.subjectrecombinationen
dc.titlePhotoluminescence Study of Carrier Localization and Recombination in Nearly Strain-Balanced Nonpolar InGaN/AlGaN Quantum Wellsen
dc.title.serialPhysica Status Solidi B-Basic Solid State Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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