Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

dc.contributor.authorCiarkowski, Timothyen
dc.contributor.authorAllen, Noah P.en
dc.contributor.authorCarlson, Ericen
dc.contributor.authorMcCarthy, Roberten
dc.contributor.authorYoutsey, Chrisen
dc.contributor.authorWang, Jingshanen
dc.contributor.authorFay, Patricken
dc.contributor.authorXie, Jinqiaoen
dc.contributor.authorGuido, Louis J.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessioned2019-08-09T12:25:03Zen
dc.date.available2019-08-09T12:25:03Zen
dc.date.issued2019-08-01en
dc.date.updated2019-08-09T08:01:46Zen
dc.description.abstractCarbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in GaN prepared via OMVPE on pseudo-bulk GaN wafers (in several cases, identical growths were performed on GaN-on-Al<sub>2</sub>O<sub>3</sub> templates for comparison purposes). Growth conditions with different growth efficiencies but identical ammonia molar flows, when normalized for growth rate, resulted in identical carbon incorporation. It is concluded that only trimethylgallium which contributes to growth of the GaN layer contributes to carbon incorporation. Carbon incorporation was found to decrease proportionally with increasing ammonia molar flow, when normalized for growth rate. Ammonia molar flow divided by growth rate is proposed as a reactor independent predictor of carbon incorporation as opposed to the often-reported input V/III ratio. A low carbon concentration of 7.3 &times; 10<sup>14</sup> atoms/cm<sup>3</sup> (prepared at a growth rate of 0.57 &micro;m/h) was obtained by optimizing growth conditions for GaN grown on pseudo-bulk GaN substrates.en
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCiarkowski, T.; Allen, N.; Carlson, E.; McCarthy, R.; Youtsey, C.; Wang, J.; Fay, P.; Xie, J.; Guido, L. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials 2019, 12, 2455.en
dc.identifier.doihttps://doi.org/10.3390/ma12152455en
dc.identifier.urihttp://hdl.handle.net/10919/93014en
dc.language.isoenen
dc.publisherMDPIen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectIII-nitride semiconductorsen
dc.subjectGaN-on-GaN homoepitaxyen
dc.subjectorganometallic vapor phase epitaxyen
dc.subjectmetal–organic chemical vapor depositionen
dc.subjectcarbon incorporationen
dc.subjectelectronic compensationen
dc.subjectmaterials characterizationen
dc.subjectsecondary ion mass spectroscopyen
dc.titleConnection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPEen
dc.title.serialMaterialsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
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