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Output power of a quantum dot laser: Effects of excited states

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dc.contributor.authorWu, Yuchangen
dc.contributor.authorJiang, Lien
dc.contributor.authorAsryan, Levon V.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessioned2017-06-12T19:02:22Zen
dc.date.available2017-06-12T19:02:22Zen
dc.date.issued2015-11-14en
dc.description.abstractA theory of operating characteristics of quantum dot (QD) lasers is discussed in the presence of excited states in QDs. We consider three possible situations for lasing: (i) ground-state lasing only; (ii) ground-state lasing at first and then the onset of also excited-state lasing with increasing injection current; (iii) excited-state lasing only. The following characteristics are studied: occupancies of the ground-state and excited-state in QDs, free carrier density in the optical confinement layer, threshold currents for ground- and excited-state lasing, densities of photons emitted via ground- and excited-state stimulated transitions, output power, internal and external differential quantum efficiencies. Under the conditions of ground-state lasing only, the output power saturates with injection current. Under the conditions of both ground- and excited-state lasing, the output power of ground-state lasing remains pinned above the excited-state lasing threshold while the power of excited-state lasing increases. There is a kink in the light-current curve at the excited-state lasing threshold. The case of excited-state lasing only is qualitatively similar to that for single-state QDs—the role of ground-state transitions is simply reduced to increasing the threshold current.en
dc.description.versionPublished versionen
dc.format.extent14 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1063/1.4935296en
dc.identifier.issn0021-8979en
dc.identifier.issue18en
dc.identifier.orcidAsryan, LV [0000-0002-2502-1559]en
dc.identifier.urihttp://hdl.handle.net/10919/78016en
dc.identifier.volume118en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000365041700007&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectPhysics, Applieden
dc.subjectPhysicsen
dc.subjectCARRIER RELAXATION DYNAMICSen
dc.subjectCONFINED ACTIVE-REGIONen
dc.subjectSEMICONDUCTOR-LASERSen
dc.subjectROOM-TEMPERATUREen
dc.subjectSATURATIONen
dc.subjectTHRESHOLDen
dc.subjectGAINen
dc.subjectCAPTUREen
dc.subjectDENSITYen
dc.titleOutput power of a quantum dot laser: Effects of excited statesen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/Materials Science and Engineeringen

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