2T-1C ferroelectric random access memory and operation method thereof

Simple item page
dc.contributor.assigneeSAMSUNG ELECTRONICS CO., LTD.en
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorYoo, In-kyeongen
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:54:17Zen
dc.date.available2016-08-24T17:54:17Zen
dc.date.filed2000-09-11en
dc.date.issued2002-06-11en
dc.description.abstractA 2T-1C FRAM, each cell of which includes two transistors and one ferroelectric capacitor so that the “charging” and “discharging” of the ferroelectric capacitor used in conjunction with the p-n junction of the two transistors performs write/read operations without switching thereby avoiding degradation problems such as fatigue and imprint in the 2T-1C FRAM.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber9658942en
dc.identifier.patentnumber6404667en
dc.identifier.urihttp://hdl.handle.net/10919/72449en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/67/046/064/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcG11C11/22en
dc.subject.uspc365/145en
dc.subject.uspcother365/189.4en
dc.subject.uspcother365/189.15en
dc.subject.uspcother365/189.16en
dc.subject.uspcother365/200en
dc.subject.uspcother365/210.1en
dc.subject.uspcother365/210.15en
dc.title2T-1C ferroelectric random access memory and operation method thereofen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
6404667.pdf
Size:
546.75 KB
Format:
Adobe Portable Document Format
Download

Collections

Virginia Tech Patents