VTechWorks staff will be away for the winter holidays starting Tuesday, December 24, 2024, through Wednesday, January 1, 2025, and will not be replying to requests during this time. Thank you for your patience, and happy holidays!
 

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs : C

Simple item page
dc.contributorVirginia Techen
dc.contributor.authorSongprakob, W.en
dc.contributor.authorZallen, Richard H.en
dc.contributor.authorLiu, W. K.en
dc.contributor.authorBacher, K. L.en
dc.contributor.departmentPhysicsen
dc.date.accessed2013-12-18en
dc.date.accessioned2014-02-11T13:45:57Zen
dc.date.available2014-02-11T13:45:57Zen
dc.date.issued2000-08-15en
dc.description.abstractInfrared reflectivity measurements (200-5000 cm(-1)) and transmittance measurements (500-5000 cm(-1)) have been carried out on heavily-doped GaAs:C films grown by molecular-beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000-3000 cm(-1) region and the one-phonon band near 270 cm(-1) rides on a progressively increasing high-reflectivity background, An effective; plasmon/one-phonon dielectric function with only two free parameters (plasma frequency omega(p) and damping constant gamma) gives a good description of the main features of both the reflectivity and transmittance spectra. The dependence of omega(p)(2) on hole concentration p is linear; at p = 1.4 x 10(20) cm(-3), omega(p) is 2150 cm(-1). At each doping, the damping constant gamma is large and corresponds to an infrared hole mobility that is about half the Hall mobility. Secondary-ion mass spectroscopy and localized-vibrational-mode measurements indicate that the Hall-derived p is close to the carbon concentration and that the Hall factor is dose to unity, so that the Hall mobility provides a good estimate of actual de mobility. The observed dichotomy between the de and infrared mobilities is real, not a statistical-averaging artifact. The explanation of the small infrared mobility resides in the influence of intervalence-band absorption on the effective-plasmon damping, which operationally determines that mobility. This is revealed by a comparison of the infrared absorption results to Braunstein's low-p p-GaAs spectra and to a k.p calculation extending Kane's theory to our high dopings. For n-GaAs, which lacks infrared interband absorption, the de and infrared mobilities do not differ.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationSongprakob, W ; Zallen, R ; Liu, WK ; et al., Aug 15, 2000. "Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs : C," PHYSICAL REVIEW B 62(7): 4501-4510. DOI: 10.1103/PhysRevB.62.4501en
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.62.4501en
dc.identifier.issn0163-1829en
dc.identifier.urihttp://hdl.handle.net/10919/25382en
dc.identifier.urlhttp://link.aps.org/doi/10.1103/PhysRevB.62.4501en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectmolecular-beam epitaxyen
dc.subjectheterojunction bipolar-transistorsen
dc.subjecteffectiveen
dc.subjecthall factoren
dc.subjectcarbon tetrabromideen
dc.subjectoptical-absorptionen
dc.subjectraman-scatteringen
dc.subjectmodesen
dc.subjectreflectanceen
dc.subjectspectraen
dc.subjectreflectivityen
dc.subjectPhysicsen
dc.titleInfrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs : Cen
dc.title.serialPhysical Review Ben
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
PhysRevB.62.4501.pdf
Size:
276.56 KB
Format:
Adobe Portable Document Format
Description:
Main article
Download

Collections

Scholarly Works, Physics