Switching behavior of semiconducting carbon nanotubes under an external electric field

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dc.contributorVirginia Techen
dc.contributor.authorRochefort, A.en
dc.contributor.authorDi Ventra, M.en
dc.contributor.authorAvouris, P.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:48Zen
dc.date.available2014-04-16T14:16:48Zen
dc.date.issued2001-04en
dc.description.abstractWe investigate theoretically the switching characteristics of semiconducting carbon nanotubes connected to gold electrodes under an external (gate) electric field. We find that the external introduction of holes is necessary to account for the experimental observations. We identify metal-induced gap states (MIGS) at the contacts and find that the MIGS of an undoped tube would not significantly affect the switching behavior, even for very short tube lengths. We also explore the miniaturization limits of nanotube transistors, and, on the basis of their switching ratio, we conclude that transistors with channels as short as 50 Angstrom would have adequate switching characteristics. (C) 2001 American Institute of Physics.en
dc.identifier.citationRochefort, A; Di Ventra, M; Avouris, P, "Switching behavior of semiconducting carbon nanotubes under an external electric field," Appl. Phys. Lett. 78, 2521 (2001); http://dx.doi.org/10.1063/1.1367295en
dc.identifier.doihttps://doi.org/10.1063/1.1367295en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47413en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/78/17/10.1063/1.1367295en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjecttransistoren
dc.titleSwitching behavior of semiconducting carbon nanotubes under an external electric fielden
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden

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