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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

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dc.contributor.authorJacobs, Alan G.en
dc.contributor.authorFeigelson, Boris N.en
dc.contributor.authorSpencer, Joseph A.en
dc.contributor.authorTadjer, Marko J.en
dc.contributor.authorHite, Jennifer K.en
dc.contributor.authorHobart, Karl D.en
dc.contributor.authorAnderson, Travis J.en
dc.date.accessioned2023-08-08T12:59:09Zen
dc.date.available2023-08-08T12:59:09Zen
dc.date.issued2023-04en
dc.description.abstractSelective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for optimization. Herein, we report highly effective silicon ion implant activation in GaN via Symmetrical Multicycle Rapid Thermal Annealing (SMRTA) at peak temperatures of 1450 to 1530 ?, producing a mobility of up to 137 cm(2)/Vs at 300K with a 57% activation efficiency for a 300 nm thick 1 x 10(19) cm(-3) box implant profile. Doping activation efficiency and mobility improved alongside peak annealing temperature, while the deleterious degradation of the as-grown material electrical properties was only evident at the highest temperatures. This demonstrates efficient dopant activation while simultaneously maintaining low levels of unintentional doping and thus a high blocking voltage potential of the drift layers for high-voltage, high-power devices. Furthermore, efficient activation with high mobility has been achieved with GaN on sapphire, which is known for having relatively high defect densities but also for offering significant commercial potential due to the availability of cheap, large-area, and robust substrates for devices.en
dc.description.notesWork conducted at the U.S. Naval Research Laboratory was supported by the Office of Naval Research. J.A.S. is partially supported by the High-Density Integration industry consortium.en
dc.description.sponsorshipOffice of Naval Research; High-Density Integration industry consortiumen
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.3390/cryst13050736en
dc.identifier.eissn2073-4352en
dc.identifier.issue5en
dc.identifier.other736en
dc.identifier.urihttp://hdl.handle.net/10919/115999en
dc.identifier.volume13en
dc.language.isoenen
dc.publisherMDPIen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectGaNen
dc.subjectdopingen
dc.subjection implantationen
dc.subjection implantation activationen
dc.subjectannealingen
dc.subjectSMRTAen
dc.subjectsymmetrical multicycle rapid thermal annealingen
dc.titleEfficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devicesen
dc.title.serialCrystalsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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