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Dynamic RON Free 1.2 kV Vertical GaN JFET

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dc.contributor.authorYang, Xinen
dc.contributor.authorZhang, Ruizheen
dc.contributor.authorWang, Bixuanen
dc.contributor.authorSong, Qihaoen
dc.contributor.authorWalker, Andyen
dc.contributor.authorPidaparthi, Subhashen
dc.contributor.authorDrowley, Cliffen
dc.contributor.authorZhang, Yuhaoen
dc.date.accessioned2024-01-31T13:52:14Zen
dc.date.available2024-01-31T13:52:14Zen
dc.date.issued2024en
dc.description.abstractDynamic on-resistance (RON) or threshold voltage (VTH) instability caused by charge trapping is one of the most crucial reliability concerns of some GaN high-electron mobility transistors (HEMTs). It has been unclear if this issue can be resolved using an alternative GaN device architecture. This work answers this question by characterizing, for the first time, the dynamic RON and VTH stability of an industrial vertical GaN transistor-NexGen’s 1200V/70mΩ fin-channel JFET, fabricated on 100 mm bulk GaN substrates. A circuit setup is deployed for the in-situ measurement of the dynamic RON under steady-state switching. The longer-term stability of RON and VTH is tested under the prolonged stress of negative gate bias and high drain bias. The vertical GaN JFET shows nearly no RON or VTH shift in these tests, which could be attributed to the low defect density of the GaN-on-GaN homoepitaxial growth, the absence of electric field crowding near the surface, and the minimal charge trapping in the native junction gate. These results present a critical milestone for vertical GaN devices towards power electronics applications.en
dc.description.sponsorshipThis work is supported in part by the National Science Foundation (Grants ECCS-2202620 and ECCS-2045001) and the Center for Power Electronics Systems Power Management Industry Consortium.en
dc.description.versionAccepted versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationX. Yang, R. Zhang, B. Wang, Q. Song, A. Walker, S. Pidaparthi, C. Drowley, Y. Zhang, "Dynamic RON Free 1.2-kV Vertical GaN JFET," IEEE Transactions on Electron Devices, vol. 71, no. 1, pp. 720-726, Jan. 2024, doi: 10.1109/TED.2023.3338140.en
dc.identifier.doihttps://doi.org/10.1109/TED.2023.3338140en
dc.identifier.urihttps://hdl.handle.net/10919/117741en
dc.language.isoenen
dc.publisherIEEEen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectpower electronicsen
dc.subjectgallium nitrideen
dc.subjectJFETen
dc.subjecton-resistanceen
dc.subjectthreshold voltageen
dc.subjectstabilityen
dc.subjectreliabilityen
dc.titleDynamic <i>R</i><sub>ON</sub> Free 1.2 kV Vertical GaN JFETen
dc.title.serialIEEE Transactions on Electron Devicesen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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