Nanostructures for Coherent Light Sources and Photodetectors

Large-scale optoelectronic integration is limited by the lack of efficient light sources and broadband photodetectors, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission as well as broadband photodetection from silicon in extending the silicon technology into fully integrated optoelectronic circuits. Recent breakthroughs, including the demonstration of high-speed optical modulators, photodetectors, and waveguides in silicon, have brought the concept of transition from electrical to optical interconnects closer to realization. The on-chip light sources based on silicon are still a key challenge due to the indirect bandgap of silicon that impedes coherent light sources. To overcome this issue, we have studied, fabricated, and characterized nanostructures including single semiconductor epilayers, multiple quantum wells, and graphene-semiconductor heterostructures to develop coherent light sources and photodetectors in silicon. To develop coherent light sources, we reported the demonstration of room-temperature lasing at the technologically crucial 1.5 m wavelength range from Er-doped GaN epilayers and Er-doped GaN multiple-quantum wells grown on silicon and sapphire. The realization of room-temperature lasing at the minimum loss window of optical fiber and in the eye-safe wavelength region of 1.5 m is highly sought-after for use in many applications in various fields including defense, industrial processing, communication, medicine, spectroscopy and imaging. The results laid the foundation for achieving hybrid GaN-Si lasers providing a new pathway towards full photonic integration for silicon optoelectronics. Silicon photodiodes contribute a large portion in the photodetector market. However, silicon photodetectors are sensitive in the UV to near infrared region. Photodetection in the mid-infrared is based on thermal radiation detectors, narrow bandgap materials (InGaAs, HgCdTe) semiconductors, photo-ionization of shallow impurities in semiconductors (Si:As, Ge:Ga), and quantum well structures. Such technology requires complicated fabrication processes or cryogenic operation, resulting in manufacturing costs and severe integration issues. To develop broadband photodetectors, we focus on graphene photodetectors on silicon. Graphene generates photocarriers by absorbing photons in a broadband spectrum from the deep-ultraviolet to the terahertz region. Graphene can be realized as the next generation broadband photodetection material, especially in the infrared to terahertz region. Here, we have demonstrated high-performance hybrid photodetectors operating from the deep-ultraviolet to the mid-infrared region with high sensitivity and ultrafast response by coupling graphene with a p-type semiconductor photosensitizer, nitrogen-doped Ta2O5 thin film.