Resonant Raman-active acoustic phonons in the mixed amorphous-microcrystalline phase of ion-implanted GaAs

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dc.contributorVirginia Techen
dc.contributor.authorHoltz, M.en
dc.contributor.authorZallen, Richard H.en
dc.contributor.authorBrafman, O.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-04-23en
dc.date.accessioned2014-05-07T15:37:05Zen
dc.date.available2014-05-07T15:37:05Zen
dc.date.issued1988-02en
dc.description.abstractWe have observed a new, strong, low-frequency peak (at 47 cm-1) in the Raman spectrum of ion-implanted GaAs having a mixed amorphous-microcrystalline microstructure. It is strongly resonant near 1.7 eV, just above the band gap, in contrast to the longitudinal-optic phonon line of the microcrystals (which resonates differently) and the bands of the amorphous component (which do not resonate). We tentatively interpret this peak in terms of acoustic phonons made Raman active by the presence of microcrystal-amorphous interface regions, and discuss several models.en
dc.description.sponsorshipTexas Instrumentsen
dc.description.sponsorshipVirginia Center for Innovative Technologyen
dc.identifier.citationHoltz, M.; Zallen, R.; Brafman, O., "Resonant Raman-active acoustic phonons in the mixed amorphous-microcrystalline phase of ion-implanted GaAs," Phys. Rev. B 37, 2737(R) DOI: http://dx.doi.org/10.1103/PhysRevB.37.2737en
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.37.2737en
dc.identifier.issn0163-1829en
dc.identifier.urihttp://hdl.handle.net/10919/47881en
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.37.2737en
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectphysics, condensed matteren
dc.titleResonant Raman-active acoustic phonons in the mixed amorphous-microcrystalline phase of ion-implanted GaAsen
dc.title.serialPhysical Review Ben
dc.typeArticle - Refereeden

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