Robustness of Topologically Protected Surface States in Layering of Bi₂Te₃ Thin Films

dc.contributorVirginia Techen
dc.contributor.authorPark, K.en
dc.contributor.authorHeremans, Jean J.en
dc.contributor.authorScarola, Vito W.en
dc.contributor.authorMinic, Djordjeen
dc.contributor.departmentPhysicsen
dc.date.accessed2013-12-10en
dc.date.accessioned2013-12-10T17:31:19Zen
dc.date.available2013-12-10T17:31:19Zen
dc.date.issued2010-10-27en
dc.description.abstractBulk Bi<sub>2</sub>Te<sub>3</sub> is known to be a topological insulator. We investigate surface states of Bi<sub>2</sub>Te<sub>3</sub>(111) thin films of one to six quintuple layers using density-functional theory including spin-orbit coupling. We construct a method to identify topologically protected surface states of thin film topological insulators. Applying this method to Bi<sub>2</sub>Te<sub>3</sub> thin films, we find that the topological nature of the surface states remains robust with the film thickness and that the films of three or more quintuple layers have topologically nontrivial surface states, which agrees with experiments.en
dc.description.sponsorshipNSF DMR-0804665en
dc.description.sponsorshipU.S. DOE DE-FG05-92ER40677, DE-FG02-08ER46532en
dc.identifier.citationPark, Kyungwha ; Heremans, J. J. ; Scarola, V. W. ; et al., Oct 27, 2010. “Robustness of Topologically Protected Surface States in Layering of Bi2Te3 Thin Films,” PHYSICAL REVIEW LETTERS 105(18): 186801. DOI: 10.1103/PhysRevLett.105.186801en
dc.identifier.doihttps://doi.org/10.1103/PhysRevLett.105.186801en
dc.identifier.issn0031-9007en
dc.identifier.urihttp://hdl.handle.net/10919/24509en
dc.identifier.urlhttp://link.aps.org/doi/10.1103/PhysRevLett.105.186801en
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjecttotal-energy calculationsen
dc.subjectsingle dirac coneen
dc.subjectwave basis-seten
dc.subjectelectronic-structureen
dc.subjectthermoelectric propertiesen
dc.subjectbismuth tellurideen
dc.subjectinsulatoren
dc.subjectbi2se3en
dc.subjectphotoemissionen
dc.subjectsb2te3en
dc.subjectPhysicsen
dc.titleRobustness of Topologically Protected Surface States in Layering of Bi₂Te₃ Thin Filmsen
dc.title.serialPhysical Review Lettersen
dc.typeArticle - Refereeden

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