Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors

TR Number
Date
2004-02-01
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract

Material integrations of GaN/GaN and Al0.25Ga0.75N/GaN semiconductors through wafer bonding technology were reported in this work. The wafer surface and interface microstructures were characterized by scanning electron microscopy and energy dispersive x-ray spectroscopy. The interface adhesion (bonding strength) was estimated based upon the interface fracture energy gamma(o) measured by double-cantilever beam technique. The interface adhesion properties of several different wafer-bonded III-V semiconductors were also compared. By comparing the atomic chemical bond energy E-o with the measured interface fracture energy gamma(o), the bondability of a few major III-V semiconductors was analyzed. (C) 2004 American Institute of Physics.

Description
Keywords
III-V semiconductors, Interface structure, Adhesion, Chemical bonds, Energy dispersive X-ray spectroscopy
Citation
Shi, F. F., Chang, K., Hsieh, K. C., Guido, L., Hoke, B. (2004). Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors. Journal of Applied Physics, 95(3), 909-912. doi: 10.1063/1.1633980