Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors
dc.contributor | Virginia Tech. Department of Materials Science and Engineering | en |
dc.contributor | University of Illinois at Urbana-Champaign. Department of Electrical and Computer Engineering. Micro & Nanotechnology Lab | en |
dc.contributor | Raytheon RF Components | en |
dc.contributor.author | Shi, Frank F. | en |
dc.contributor.author | Chang, Kuo-lih | en |
dc.contributor.author | Hsieh, Kuang-Chien | en |
dc.contributor.author | Guido, Louis J. | en |
dc.contributor.author | Hoke, Bill | en |
dc.contributor.department | Materials Science and Engineering (MSE) | en |
dc.date.accessed | 2015-04-24 | en |
dc.date.accessioned | 2015-05-21T19:47:33Z | en |
dc.date.available | 2015-05-21T19:47:33Z | en |
dc.date.issued | 2004-02-01 | en |
dc.description.abstract | Material integrations of GaN/GaN and Al0.25Ga0.75N/GaN semiconductors through wafer bonding technology were reported in this work. The wafer surface and interface microstructures were characterized by scanning electron microscopy and energy dispersive x-ray spectroscopy. The interface adhesion (bonding strength) was estimated based upon the interface fracture energy gamma(o) measured by double-cantilever beam technique. The interface adhesion properties of several different wafer-bonded III-V semiconductors were also compared. By comparing the atomic chemical bond energy E-o with the measured interface fracture energy gamma(o), the bondability of a few major III-V semiconductors was analyzed. (C) 2004 American Institute of Physics. | en |
dc.description.sponsorship | United States. Department of Energy - Grant No. DEFG02-91-ER45439 | en |
dc.description.sponsorship | United States. Defense Advanced Research Projects Agency - Grant No. MDA 972-00-1-0020 | en |
dc.format.extent | 5 pages | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Shi, F. F., Chang, K., Hsieh, K. C., Guido, L., Hoke, B. (2004). Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors. Journal of Applied Physics, 95(3), 909-912. doi: 10.1063/1.1633980 | en |
dc.identifier.doi | https://doi.org/10.1063/1.1633980 | en |
dc.identifier.issn | 0021-8979 | en |
dc.identifier.uri | http://hdl.handle.net/10919/52503 | en |
dc.identifier.url | http://scitation.aip.org/content/aip/journal/jap/95/3/10.1063/1.1633980 | en |
dc.language.iso | en_US | en |
dc.publisher | American Institute of Physics | en |
dc.rights | In Copyright | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
dc.subject | III-V semiconductors | en |
dc.subject | Interface structure | en |
dc.subject | Adhesion | en |
dc.subject | Chemical bonds | en |
dc.subject | Energy dispersive X-ray spectroscopy | en |
dc.title | Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors | en |
dc.title.serial | Journal of Applied Physics | en |
dc.type | Article - Refereed | en |
dc.type.dcmitype | Text | en |
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