Theory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structure
A model for calculating the operating characteristics of semiconductor quantum well (QW) lasers is presented. The model exploits the condition of global electroneutrality, which includes the charge carriers both in the two-dimensional (2D) active region (QW) and bulk waveguide region (optical confinement layer – OCL). The charge of each sign in the OCL is shown to be significantly larger than that in the QW. As a result of this, (i) the global electroneutrality condition reduces to the condition of electroneutrality in the OCL and (ii) the local electroneutrality in the QW can be strongly violated, i.e., the 2D electron and hole densities in the QW can significantly differ from each other.