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Path-integral approach to the Hubbard model

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dc.contributorVirginia Techen
dc.contributor.authorWeng, Z. Y.en
dc.contributor.authorTing, C. S.en
dc.contributor.authorLee, T. K.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-04-23en
dc.date.accessioned2014-05-07T15:37:03Zen
dc.date.available2014-05-07T15:37:03Zen
dc.date.issued1991-02en
dc.description.abstractA path-integral approach to the Hubbard model is developed for the whole range of the coupling strength U. At half filling, the strong-coupling results are readily reproduced within the simple Gaussian fluctuations. The low-lying spin wave is shown to be described by the nonlinear sigma-model. The effective coupling of the doped hole with the background fluctuations also agrees with that obtained from the t-J model in the small-doping limit. At finite doping, such a formalism may provide a starting point for investigating the short-range spin-liquid state.en
dc.description.sponsorshipRobert A. Welch Foundation and the Texas Center for Superconductivity at the University of Houston under the Prime Grant No. MDA-972-886-0002 from the Defense Advanced Research Project Agent and the State of Texasen
dc.description.sponsorshipThomas F. and Kate Miller Jeffress Memorial Trusten
dc.identifier.citationWeng, Z. Y.; Ting, C. S.; Lee, T. K., "Path-integral approach to the Hubbard model," Phys. Rev. B 43, 3790(R) DOI: http://dx.doi.org/10.1103/PhysRevB.43.3790en
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.43.3790en
dc.identifier.issn0163-1829en
dc.identifier.urihttp://hdl.handle.net/10919/47872en
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.43.3790en
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjecthigh-tc superconductivityen
dc.subjectfield-theoryen
dc.subjectsigma-modelen
dc.subjectspinen
dc.subjectantiferromagnetsen
dc.subjectstateen
dc.subjectphysics, condensed matteren
dc.titlePath-integral approach to the Hubbard modelen
dc.title.serialPhysical Review Ben
dc.typeArticle - Refereeden

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