MOS-bipolar composite power switching devices

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dc.contributor.authorChin, Shaoanen
dc.contributor.committeechairChen, De Yu "Dan"en
dc.contributor.committeememberLee, Freden
dc.contributor.committeememberBurton, Larry C.en
dc.contributor.committeememberStephenson, F. Williamen
dc.contributor.committeememberRutland, Leon W. Jr.en
dc.contributor.departmentElectrical Engineeringen
dc.date.accessioned2015-07-09T20:43:30Zen
dc.date.available2015-07-09T20:43:30Zen
dc.date.issued1985en
dc.description.abstractTwo MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and large safe operating areas. Application characteristics of the devices for high frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed.en
dc.description.degreePh. D.en
dc.format.extentxvi, 228 leavesen
dc.format.mimetypeapplication/pdfen
dc.identifier.urihttp://hdl.handle.net/10919/54275en
dc.language.isoen_USen
dc.publisherVirginia Polytechnic Institute and State Universityen
dc.relation.isformatofOCLC# 14545416en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V856 1985.C546en
dc.subject.lcshPower semiconductors -- Design and constructionen
dc.subject.lcshThyristors -- Design and constructionen
dc.subject.lcshBipolar transistors -- Design and constructionen
dc.titleMOS-bipolar composite power switching devicesen
dc.typeDissertationen
dc.type.dcmitypeTexten
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.leveldoctoralen
thesis.degree.namePh. D.en

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