dc.contributor.author	Banerjee, Rajarshi	en
dc.contributor.department	Physics	en
dc.date.accessioned	2016-06-27T19:03:18Z	en
dc.date.available	2016-06-27T19:03:18Z	en
dc.date.issued	2001	en
dc.description.abstract	Metal/semiconductor interfaces, particularly those involving Si, are of great technological and scientific interest. In atomically abrupt interfaces, many properties are determined by interatomic interactions over a few layers, i.e., over ~1 nanometer. The initial stages of growth of an atomic layer related to structural and electronic properties are thus important to thin film behavior. Surface science studies on metal-semiconductor systems often lead to contradictory conclusions regarding bonding sites and even whether the first layer is metallic or not. A key piece of information that must be consistent with any study is the number of atoms per unit area in the first layer, which is difficult to assess directly. Alkali-metal-semiconductor systems have been studied as model abrupt interfaces for several years. Novel effects, such as electron localization, were observed. Still, determinations of absolute coverage have been lacking. This dissertation describes results of absolute coverage measurements for Cs on Si(100)(2X1), Si(111)(7X7), and Si (111)(v3 X v3)R30°-B reconstructed surfaces using Rutherford Backscattering Spectrometry in ultrahigh vacuum. The results bracket possible structural models for these systems. For the Cs/Si(111)(v3 X v3)R30°-B interface, this work confirms conclusions regarding electron localization effects and introduces considerations of ion-beam-induced desorption for the weakly-bound Cs	en
dc.format.mimetype	application/pdf	en
dc.identifier	eprint:260	en
dc.identifier.uri	http://hdl.handle.net/10919/71500	en
dc.language.iso	en	en
dc.rights	In Copyright	en
dc.rights.uri	http://rightsstatements.org/vocab/InC/1.0/	en
dc.subject	reconstruction	en
dc.subject	silicon	en
dc.subject	thin films	en
dc.subject	RBS	en
dc.subject	interface	en
dc.subject	surface physics	en
dc.subject	alkali metals	en
dc.subject	cesium	en
dc.subject	ordered	en
dc.subject	ordered growth	en
dc.subject	epitaxy	en
dc.subject	ion scattering	en
dc.subject	semiconductors	en
dc.subject	metalization	en
dc.subject	characterization	en
dc.subject	Rutherford	en
dc.subject	boronated	en
dc.subject	doped	en
dc.subject.lcc	QC	en
dc.title	Absolute coverage measurements of ultrathin alkali-metal films on reconstructed silicon	en
dc.type	Dissertation	en
thesis.degree.grantor	Drexel University	en
thesis.degree.level	doctoral	en

Absolute coverage measurements of ultrathin alkali-metal films on reconstructed silicon

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