Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

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dc.contributorVirginia Techen
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorZhu, Y.en
dc.contributor.authorMaurya, Deepamen
dc.contributor.authorPriya, Shashanken
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentCenter for Energy Harvesting Materials and Systems (CEHMS)en
dc.contributor.departmentMechanical Engineeringen
dc.contributor.departmentMaterials Science and Engineeringen
dc.date.accessed2014-01-10en
dc.date.accessioned2014-01-21T19:28:04Zen
dc.date.available2014-01-21T19:28:04Zen
dc.date.issued2013-03-01en
dc.description.abstractThe band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 +/- 0.05 eV. The extracted conduction band offset value was 2.66 +/- 0.1 eV using the bandgaps of HfO2 of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO2/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794838]en
dc.description.sponsorshipIntel Corporationen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHudait, M. K.; Zhu, Y.; Maurya, D.; et al., "Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy," Appl. Phys. Lett. 102, 093109 (2013); http://dx.doi.org/10.1063/1.4794838en
dc.identifier.doihttps://doi.org/10.1063/1.4794838en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/24924en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/102/9/10.1063/1.4794838en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectLogic applicationsen
dc.subjectStrained-sien
dc.subjectHigh-speeden
dc.subjectChannelsen
dc.subjectGEen
dc.subjectEnhancementen
dc.subjectMobilityen
dc.subjectStatesen
dc.subjectPhysicsen
dc.titleEnergy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxyen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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