Thin films of layered-structure (1-x)SrBi2Ta2O9-xBi(3)Ti(Ta1-yNby)O-9 solid solution for ferroelectric random access memory devices

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dc.contributorVirginia Techen
dc.contributor.authorDesu, Seshu B.en
dc.contributor.authorJoshi, Pooran C.en
dc.contributor.authorZhang, X.en
dc.contributor.authorRyu, S. O.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:49Zen
dc.date.available2014-04-16T14:16:49Zen
dc.date.issued1997-08-01en
dc.description.abstractWe report on the thin films of solid-solution material (1-x)SrBi2Ta2O9-xBi(3)Ti(Ta1-yNby)O-9 fabricated by a modified metalorganic solution deposition technique for ferroelectric random access memory devices. Using the modified technique, it was possible to obtain the pyrochlore free crystalline thin films at an annealing temperature as low as 600 degrees C. The solid-solution of layered perovskite materials helped us to significantly improve the ferroelectric properties, higher P-r and higher T-c, compared to SrBi2Ta2O9; a leading candidate material for memory applications. For example, the films with 0.7 SrBi2Ta2O9-0.3Bi(3)TiTaO(9) composition and annealed in the temperature range 650-750 degrees C exhibited 2 P-r and E-c values in the range 12.4-27.8 mu C/cm(2) and 68-80 kV/cm, respectively. The leakage current density was lower than 10(-8) A/cm(2) at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics under bipolar stressing. (C) 1997 American Institute of Physics.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDesu, SB; Joshi, PC; Zhang, X; et al., "Thin films of layered-structure (1-x)SrBi2Ta2O9-xBi(3)Ti(Ta1-yNby)O-9 solid solution for ferroelectric random access memory devices," Appl. Phys. Lett. 71, 1041 (1997); http://dx.doi.org/10.1063/1.119721en
dc.identifier.doihttps://doi.org/10.1063/1.119721en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47421en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/71/8/10.1063/1.119721en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectFerroelectric materialsen
dc.subjectFerroelectric thin filmsen
dc.subjectFerroelectric memoriesen
dc.subjectMaterials propertiesen
dc.subjectSolid solutionsen
dc.titleThin films of layered-structure (1-x)SrBi2Ta2O9-xBi(3)Ti(Ta1-yNby)O-9 solid solution for ferroelectric random access memory devicesen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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