Koster-Slater model for the interface-state problem

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dc.contributorVirginia Techen
dc.contributor.authorDi Ventra, M.en
dc.contributor.authorBerthod, C.en
dc.contributor.authorBinggeli, N.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-04-23en
dc.date.accessioned2014-05-07T15:37:00Zen
dc.date.available2014-05-07T15:37:00Zen
dc.date.issued2000-10en
dc.description.abstractA Koster-Slater approach to the problem of localized states at semiconductor interfaces has been developed. It allows us to relate the existence and/or the energy position of interface states to some essential bulk features of the constituent materials and some interface-bonding parameters. The condition for the existence of localized states and the relevance of the model will be discussed comparing the predictions entailed by the latter with the results of ab initio calculations on the Ge/GaAs (110) interface.en
dc.identifier.citationDi Ventra, M.;Berthod, C.; Binggeli, N., "Koster-Slater model for the interface-state problem," Phys. Rev. B 62, R10622(R) DOI: http://dx.doi.org/10.1103/PhysRevB.62.R10622en
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.62.R10622en
dc.identifier.issn1098-0121en
dc.identifier.urihttp://hdl.handle.net/10919/47858en
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.62.R10622en
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectgaas-ge interfaceen
dc.subjectelectronic-structureen
dc.subjectsurfacesen
dc.subjectznseen
dc.subjectphysics, condensed matteren
dc.titleKoster-Slater model for the interface-state problemen
dc.title.serialPhysical Review Ben
dc.typeArticle - Refereeden

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