Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

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dc.contributorVirginia Tech. Physics Departmenten
dc.contributorNational High Magnetic Field Laboratoryen
dc.contributorNaval Research Laboratoryen
dc.contributorNational Renewable Energy Laboratoryen
dc.contributorUniversity of California, Santa Barbara. Department of Electrical and Computer Engineeringen
dc.contributor.authorMerritt, T. R.en
dc.contributor.authorMeeker, M. A.en
dc.contributor.authorMagill, Brenden A.en
dc.contributor.authorKhodaparast, Giti A.en
dc.contributor.authorMcGill, S.en
dc.contributor.authorTischler, J. G.en
dc.contributor.authorChoi, S. G.en
dc.contributor.authorPalmstrom, C. J.en
dc.contributor.departmentPhysicsen
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T15:46:25Zen
dc.date.available2015-05-21T15:46:25Zen
dc.date.issued2014-05-21en
dc.description.abstractThe excitonic radiative transitions of InAsxP1-x (x = 0.13 and x = 0.40) alloy epitaxial layers were studied through magnetic field and temperature dependent photoluminescence and time-resolved photoluminescence spectroscopy. While the linewidth and lineshape of the exciton transition for x = 0.40 indicate the presence of alloy broadening due to random anion distribution and the existence of localized exciton states, those of x = 0.13 suggest that this type of compositional disorder is absent in x = 0.13. This localization is further supported by the behavior of the exciton transitions at low temperature and high magnetic fields. InAs0.4P0.6 exhibits anomalous "S-shaped" temperature dependence of the excition emission peak below 100K as well as linewidth broadening at high magnetic fields due to the compression of the excitonic volume amid compositional fluctuations. Finally, photoluminescence decay patterns suggest that the excitons radiatively relax through two channels, a fast and a slow decay. While the lifetime of the fast decay is comparable for both compositions (similar to 30 ps), that of the slow decay increases from 206 ps to 427 ps as x increases from 0.13 to 0.40, attributable to carrier migration between the localization states of InAs0.4P0.6. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipNational Science Foundation - Career Award DMR-0846834en
dc.description.sponsorshipNational High Magnetic Field Laboratory - National Science Foundation Cooperative Agreement No. DMR-1157490en
dc.description.sponsorshipFloridaen
dc.description.sponsorshipU.S. Department of Energyen
dc.description.sponsorshipUCGPen
dc.format.extent9 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMerritt, T. R., Meeker, M. A., Magill, B. A., Khodaparast, G. A., McGill, S., Tischler, J. G., Choi, S. G., Palmstrom, C. J. (2014). Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers. Journal of Applied Physics, 115(19). doi: 10.1063/1.4876121en
dc.identifier.doihttps://doi.org/10.1063/1.4876121en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52384en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/115/19/10.1063/1.4876121en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectExcitonsen
dc.subjectPhotoluminescenceen
dc.subjectLinewidthsen
dc.subjectMagnetic fieldsen
dc.subjectBand gapen
dc.titlePhotoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layersen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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