Millimeter-Wave Harmonically-Tuned Silicon Power Amplifiers for High Efficiency

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dc.contributor.authorMortazavi, Seyed Yahyaen
dc.contributor.committeechairKoh, Kwang-Jinen
dc.contributor.committeememberRaman, Sanjayen
dc.contributor.committeememberBuehrer, R. Michaelen
dc.contributor.committeememberHa, Dong S.en
dc.contributor.committeememberNguyen, Vinhen
dc.contributor.departmentElectrical and ComputerEngineeringen
dc.date.accessioned2018-03-04T07:00:35Zen
dc.date.available2018-03-04T07:00:35Zen
dc.date.issued2016-09-09en
dc.description.abstractThis works demonstrates the feasibility of the inverse-Class-F harmonic tuning approach for mm-wave silicon PAs. This research addresses the challenges and limitations of the high efficiency inverse-Class-F PAs for mm-wave silicon technology. This work proposes different load networks to mitigate the challenges which are verified with implementations at different mm-wave frequencies with the highest power efficiency performances reported so far: PAE= 50% @ 24 GHz, PAE = 43% @ 41 GHz, and PAE = 23% @ 94 GHz. The design methodology and detailed analysis of the proposed load networks presented and verified with implementation and measured results.en
dc.description.degreePh. D.en
dc.format.mediumETDen
dc.identifier.othervt_gsexam:8597en
dc.identifier.urihttp://hdl.handle.net/10919/82440en
dc.publisherVirginia Techen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectClass-Fen
dc.subjectclass-F-1en
dc.subject5Gen
dc.subjectharmonic tuned power amplifieren
dc.subjectinverse class Fen
dc.subject28 GHzen
dc.subject38 GHzen
dc.subjectKa-band PAen
dc.subjectSiGe PAen
dc.titleMillimeter-Wave Harmonically-Tuned Silicon Power Amplifiers for High Efficiencyen
dc.typeDissertationen
thesis.degree.disciplineComputer Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.leveldoctoralen
thesis.degree.namePh. D.en

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