Performance Analysis of TaSiOx Inspired Sub-10 nm Energy Efficient In₀.₅₃Ga₀.₄₇As Quantum Well Tri-Gate Technology

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dc.contributorVirginia Techen
dc.contributor.authorSaluru, Sarat K.en
dc.contributor.authorLiu, Jheng-Sinen
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2017-12-06T19:12:56Zen
dc.date.available2017-12-06T19:12:56Zen
dc.date.issued2017-10-24en
dc.description.abstractIn this paper, for the first time, the performance analysis of short channel In₀.₅₃Ga₀.₄₇As quantum well (QW) 3-D tri-gate technology with advanced high-κ gate dielectric, TaSiOx is presented. We benchmark the projected performance of sub-10 nm In₀.₅₃Ga₀.₄₇As transistor technology as a function of fin width, fin aspect ratio, and gate length scaling based on present-day lithographic advancement aiding InGaAs QW tri-gate technology as a replacement to Si for sub-10 nm transistor technology. The highly scaled oxide (EOT ∼ 12Å) while retaining superior interfacial properties (Dit ∼ 4 × 10¹¹ cm⁻²eV⁻¹) provides higher ON current for given idle performance. Furthermore, the simulated In₀.₅₃Ga₀.₄₇As tri-gate transistor exhibits superior gate electrostatic control with low OFF-state current (IOFF) ∼ 24.5 nA/μm, peak transconductance (gm) ∼ 2 mS/ μm and high ION/IOFF ratio ∼ 2.3 × 10³, aiding the case of alternate channel transistors for high-speed and low-power CMOS logic.en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1109/JEDS.2017.2755499en
dc.identifier.issue6en
dc.identifier.urihttp://hdl.handle.net/10919/81054en
dc.identifier.volume5en
dc.language.isoenen
dc.publisherIEEEen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectInGaAsen
dc.subjectInGaAs/InAlAs heterojunctionsen
dc.subjectFin field-effect transistorsen
dc.subjecttri-gateen
dc.subjectSimulationen
dc.titlePerformance Analysis of TaSiOx Inspired Sub-10 nm Energy Efficient In₀.₅₃Ga₀.₄₇As Quantum Well Tri-Gate Technologyen
dc.title.serialJournal of the Electron Devices Societyen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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