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Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

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dc.contributorVirginia Techen
dc.contributor.authorGhosh, Ahelien
dc.contributor.authorClavel, Michael B.en
dc.contributor.authorNguyen, Peter D.en
dc.contributor.authorMeeker, Michael A.en
dc.contributor.authorKhodaparast, Giti A.en
dc.contributor.authorBodnar, Robert J.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2017-12-06T19:12:56Zen
dc.date.available2017-12-06T19:12:56Zen
dc.date.issued2017en
dc.description.abstractThe growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated 0.10% tensile-strained Ge epilayer, owing to the thermal expansion coefficient mismatch between Ge and Si, and negligible epilayer lattice tilt. Micro-Raman spectroscopic analysis corroborated the strain-state of the Ge thin-film. Cross-sectional transmission electron microscopy revealed the formation of 90°Lomer dislocation network at Ge/Si heterointerface, suggesting the rapid and complete relaxation of Ge epilayer during growth. Atomic force micrographs exhibited smooth surface morphology with surface roughness < 2 nm. Temperature dependent Hall mobility measurements and the modelling thereof indicated that ionized impurity scattering limited carrier mobility in Ge layer. Capacitanceand conductance-voltage measurements were performed to determine the effect of epilayer dislocation density on interfacial defect states (Dit ) and their energy distribution. Finally, extractedDit values were benchmarked against publishedDit data for GeMOS devices, as a function of threading dislocation density within the Ge layer. The results obtained were comparable with GeMOSdevices integrated on Si via alternative buffer schemes. This comprehensive study of directly-grown epitaxial Ge-on-Si provides a pathway for the development of Ge-based electronic devices on Si.en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1063/1.4993446en
dc.identifier.urihttp://hdl.handle.net/10919/81053en
dc.identifier.volume7en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleGrowth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxyen
dc.title.serialAIP Advancesen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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