Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model

TR Number

Date

2022-12

Journal Title

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Volume Title

Publisher

Pergamon-Elsevier Science

Abstract

Description

Keywords

Power electronics, Power device, Breakdown voltage, Differential evolution, Gallium nitride (GaN), Machine learning, Technology Computer-Aided Design (TCAD), Diode

Citation