Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model
TR Number
Date
2022-12
Journal Title
Journal ISSN
Volume Title
Publisher
Pergamon-Elsevier Science
Abstract
Description
Keywords
Power electronics, Power device, Breakdown voltage, Differential evolution, Gallium nitride (GaN), Machine learning, Technology Computer-Aided Design (TCAD), Diode