Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model

Simple item page
dc.contributor.authorLu, Alberten
dc.contributor.authorMarshall, Jordanen
dc.contributor.authorWang, Yifanen
dc.contributor.authorXiao, Mingen
dc.contributor.authorZhang, Yuhaoen
dc.contributor.authorWong, Hiu Yungen
dc.date.accessioned2023-05-02T19:08:46Zen
dc.date.available2023-05-02T19:08:46Zen
dc.date.issued2022-12en
dc.description.abstractIn this paper, two methodologies are used to speed up the maximization of the breakdown voltage (BV) of a vertical GaN diode that has a theoretical maximum BV of -2100 V. Firstly, we demonstrated a 5X faster accurate simulation method in Technology Computer-Aided-Design (TCAD). This allows us to find 50 % more numbers of high BV (>1400 V) designs at a given simulation time. Secondly, a machine learning (ML) model is developed using TCAD-generated data and used as a surrogate model for differential evolution optimization. It can inversely design an out-of-the-training-range structure with BV as high as 1887 V (89 % of the ideal case) compared to -1100 V designed with human domain expertise.en
dc.description.notesAcknowledgment This material is based upon work supported by the National Science Foundation under Grant No. ECCS-2134374.en
dc.description.sponsorshipNational Science Foundation; [ECCS-2134374]en
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1016/j.sse.2022.108468en
dc.identifier.eissn1879-2405en
dc.identifier.other108468en
dc.identifier.urihttp://hdl.handle.net/10919/114896en
dc.identifier.volume198en
dc.language.isoenen
dc.publisherPergamon-Elsevier Scienceen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectPower electronicsen
dc.subjectPower deviceen
dc.subjectBreakdown voltageen
dc.subjectDifferential evolutionen
dc.subjectGallium nitride (GaN)en
dc.subjectMachine learningen
dc.subjectTechnology Computer-Aided Design (TCAD)en
dc.subjectDiodeen
dc.titleVertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate modelen
dc.title.serialSolid-State Electronicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
1-s2.0-S0038110122002398-main.pdf
Size:
1.42 MB
Format:
Adobe Portable Document Format
Description:
Published version
Download

Collections

Scholarly Works, Center for Power Electronics Systems