Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

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dc.contributor.authorKamble, Girish U.en
dc.contributor.authorShetake, Nitin P.en
dc.contributor.authorYadav, Suhas D.en
dc.contributor.authorTeli, Aviraj M.en
dc.contributor.authorPatil, Dipali S.en
dc.contributor.authorPawar, Sachin A.en
dc.contributor.authorKaranjkar, Milind M.en
dc.contributor.authorPatil, Pramod S.en
dc.contributor.authorShin, Jae C.en
dc.contributor.authorOrlowski, Marius K.en
dc.contributor.authorKamat, Rajanish K.en
dc.contributor.authorDongale, Tukaram D.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2018-09-24T12:43:34Zen
dc.date.available2018-09-24T12:43:34Zen
dc.date.issued2018-09-19en
dc.date.updated2018-09-23T03:32:38Zen
dc.description.abstractIn the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO2/SS thin film metal–insulator–metal device. The voltage-induced resistive switching leads to clockwise and counter-clockwise resistive switching effects. The present investigations confirm that the coexistence of both RS mechanisms is dependent on input voltage, charge-flux and time. Furthermore, the non-zero I–V crossing locations and crossovers hysteresis loops suggested that the developed device has memristive and meminductive properties. The memristive and meminductive memory effects are further confirmed by electrochemical impedance spectroscopy. The results suggested that the mem-device dynamics and electrochemical kinetics during different voltage sweeps and sweep rates are responsible for the coexistence of filamentary and homogeneous resistive switching mechanisms as well as memristive and meminductive memory effect in single Al/MnO2/SS metal–insulator–metal device. The coexistence of both RS effects is useful for the development of high-performance resistive memory and electronic synapse devices. Furthermore, the coexistence of memristive and meminductive memory effects is important for the development of adaptive and self-resonating devices and circuits.en
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1007/s40089-018-0249-zen
dc.identifier.urihttp://hdl.handle.net/10919/85115en
dc.language.isoenen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.holderThe Author(s)en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleCoexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal deviceen
dc.title.serialInternational Nano Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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