Effect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs

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dc.contributorVirginia Techen
dc.contributor.authorSauncy, T.en
dc.contributor.authorHoltz, M.en
dc.contributor.authorZallen, Richard H.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-04-23en
dc.date.accessioned2014-05-07T15:36:55Zen
dc.date.available2014-05-07T15:36:55Zen
dc.date.issued1994-10en
dc.description.abstractWe have used hydrostatic pressure as a means for studying a resonant Raman mode observed at 47 cm(-1) in highly disordered, ion implanted, unannealed GaAs. The mode shifts weakly (-0.07 +/- 0.15 cm(-1)/GPa), supporting an identification of this band-resonant vibration as stemming from the breathing mode of the gallium vacancies, which are expected to be in high concentration. We measure a pressure coefficient of the longitudinal-optic phonon in these (5.5 nm) nanocrystals of GaAs to be 3.6 +/- 0.1 cm(-1)/GPa. The good agreement between our value and the pressure shift of this phonon in bulk GaAs implies that the bulk modulus is independent of size at least down to this size crystallite.en
dc.identifier.citationSauncy, T.; Holtz, M.; Zallen, R., "Effect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs," Phys. Rev. B 50, 10702 DOI: http://dx.doi.org/10.1103/PhysRevB.50.10702en
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.50.10702en
dc.identifier.issn0163-1829en
dc.identifier.urihttp://hdl.handle.net/10919/47831en
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.50.10702en
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectactive acoustic phononsen
dc.subjectmolecular-beam epitaxyen
dc.subjecthydrostatic-pressureen
dc.subjectraman-scatteringen
dc.subjectalasen
dc.subjectinpen
dc.subjectphysics, condensed matteren
dc.titleEffect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAsen
dc.title.serialPhysical Review Ben
dc.typeArticle - Refereeden

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