Elucidating the role of InGaAs and InAlAs buffers on carrier dynamics of tensile strained Ge double heterostructures

dc.contributor.authorBhattacharya, Shuvodipen
dc.contributor.authorJohnston, Steven W.en
dc.contributor.authorBodnar, Robert J.en
dc.contributor.authorHudait, Mantu K.en
dc.date.accessioned2025-03-05T13:28:07Zen
dc.date.available2025-03-05T13:28:07Zen
dc.date.issued2024-06-06en
dc.description.abstractExtensive research efforts of strained germanium (Ge) are currently underway due to its unique properties, namely, (i) possibility of band gap and strain engineering to achieve a direct band gap, thus exhibiting superior radiative properties, and (ii) higher electron and hole mobilities than Si for upcoming technology nodes. Realizing lasing structures is vital to leveraging the benefits of tensile-strained Ge (ε-Ge). Here, we use a combination of different analytical tools to elucidate the effect of the underlying InGaAs/InAlAs and InGaAs overlaying heterostructures on the material quality and strain state of ε-Ge grown by molecular beam epitaxy. Using X-ray analysis, we show the constancy of tensile strain in sub-50 nm ε-Ge in a quantum-well (QW) heterostructure. Further, effective carrier lifetime using photoconductive decay as a function of buffer type exhibited a high (low) defect-limited carrier lifetime of ∼68 ns (∼13 ns) in 0.61% (0.66%) ε-Ge grown on an InGaAs (InAlAs) buffer. These results correspond well with the measured surface roughness of 1.289 nm (6.303 nm), consistent with the surface effect of the ε-Ge/III–V heterointerface. Furthermore, a reasonably high effective lifetime of ∼78 ns is demonstrated in a QW of ∼30 nm 1.6% ε-Ge, a moderate reduction from ∼99 ns in uncapped ε-Ge, alluding to the surface effect of the overlying heterointerface. Thus, the above results highlight the prime quality of ε-Ge that can be achieved via III–V heteroepitaxy and paves a path for integrated Ge photonics.en
dc.description.versionPublished versionen
dc.format.extentPages 4247-4256en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1021/acsaelm.4c00347en
dc.identifier.issue6en
dc.identifier.orcidHudait, Mantu [0000-0002-9789-3081]en
dc.identifier.urihttps://hdl.handle.net/10919/124785en
dc.identifier.volume6en
dc.language.isoenen
dc.publisherACSen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleElucidating the role of InGaAs and InAlAs buffers on carrier dynamics of tensile strained Ge double heterostructuresen
dc.title.serialACS Applied Electronic Materialsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
dc.type.otherArticleen
pubs.organisational-groupVirginia Techen
pubs.organisational-groupVirginia Tech/Engineeringen
pubs.organisational-groupVirginia Tech/Engineering/Electrical and Computer Engineeringen
pubs.organisational-groupVirginia Tech/All T&R Facultyen
pubs.organisational-groupVirginia Tech/Engineering/COE T&R Facultyen

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