Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

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dc.contributor.authorQin, Yuanen
dc.contributor.authorWang, Zhengpengen
dc.contributor.authorSasaki, Koheien
dc.contributor.authorYe, Jiandongen
dc.contributor.authorZhang, Yuhaoen
dc.date.accessioned2023-06-22T13:12:42Zen
dc.date.available2023-06-22T13:12:42Zen
dc.date.issued2023-06en
dc.description.abstractBenefitted from progress on the large-diameter Ga2O3 wafers and Ga2O3 processing techniques, the Ga2O3 power device technology has witnessed fast advances toward power electronics applications. Recently, reports on large-area (ampere-class) Ga2O3 power devices have emerged globally, and the scope of these works have gone well beyond the bare-die device demonstration into the device packaging, circuit testing, and ruggedness evaluation. These results have placed Ga2O3 in a unique position as the only ultra-wide bandgap semiconductor reaching these indispensable milestones for power device development. This paper presents a timely review on the state-of-the-art of the ampere-class Ga2O3 power devices (current up to >100 A and voltage up to >2000 V), including their static electrical performance, switching characteristics, packaging and thermal management, and the overcurrent/overvoltage ruggedness and reliability. Exciting research opportunities and critical technological gaps are also discussed.en
dc.description.notesWe appreciate the in-person discussions with Ga<SUB>2</SUB>O<SUB>3</SUB> researchers in IWGO2022. The work at Virginia Tech is in part supported by National Science Foundation under Grants ECCS-2100504 and ECCS-2230412 and in part by the Center for Power Electronics Systems High Density Integration Industry Consortium.en
dc.description.sponsorshipNational Science Foundation [ECCS-2230412]; Center for Power Electronics Systems High Density Integration Industry Consortium; [ECCS-2100504]en
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.35848/1347-4065/acb3d3en
dc.identifier.eissn1347-4065en
dc.identifier.issn0021-4922en
dc.identifier.issueSFen
dc.identifier.otherSF0801en
dc.identifier.urihttp://hdl.handle.net/10919/115482en
dc.identifier.volume62en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectgallium oxideen
dc.subjectpower electronicsen
dc.subjectpower semiconductor devicesen
dc.subjectpackagingen
dc.subjectpower converteren
dc.subjectthermal managementen
dc.subjectruggednessen
dc.titleRecent progress of Ga2O3 power technology: large-area devices, packaging and applicationsen
dc.title.serialJapanese Journal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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