Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

Simple item page
dc.contributor.authorWu, Yuchangen
dc.contributor.authorAsryan, Levon V.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessioned2017-06-12T19:05:42Zen
dc.date.available2017-06-12T19:05:42Zen
dc.date.issued2016-08-28en
dc.description.abstractWe develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the currentvoltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.en
dc.description.versionPublished versionen
dc.format.extent? - ? (12) page(s)en
dc.identifier.doihttps://doi.org/10.1063/1.4961046en
dc.identifier.issn0021-8979en
dc.identifier.issue8en
dc.identifier.orcidAsryan, LV [0000-0002-2502-1559]en
dc.identifier.urihttp://hdl.handle.net/10919/78019en
dc.identifier.volume120en
dc.languageEnglishen
dc.publisherAmerican Institute of Physicsen
dc.relation.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000383913400022&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectPhysics, Applieden
dc.subjectPhysicsen
dc.subjectINTERMEDIATE BANDen
dc.subjectEFFICIENCYen
dc.subjectCHARGEen
dc.subjectLASERen
dc.subjectTRANSITIONSen
dc.subjectIMPROVEMENTen
dc.subjectOPERATIONen
dc.subjectCIRCUITen
dc.subjectREGIONen
dc.titleTheory of photovoltaic characteristics of semiconductor quantum dot solar cellsen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/Materials Science and Engineeringen

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
120jap08-asryan.pdf
Size:
908.6 KB
Format:
Adobe Portable Document Format
Description:
Publisher's Version
Download
License bundle
Now showing 1 - 1 of 1
Name:
VTUL_Distribution_License_2016_05_09.pdf
Size:
18.09 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

All Faculty Deposits
Scholarly Works, Materials Science and Engineering (MSE)