Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

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Date

2007-04

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Publisher

AIP Publishing

Abstract

The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times. (c) 2007 American Institute of Physics.

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Keywords

iii-v semiconductors, magnetic semiconductor, photogenerated carriers, heterostructures, in1-xmnxsb, Physics

Citation

Nontapot, K.; Kini, R. N.; Gifford, A.; et al., "Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films," Appl. Phys. Lett. 90, 143109 (2007); http://dx.doi.org/10.1063/1.2719173