Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films
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Date
2007-04
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Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times. (c) 2007 American Institute of Physics.
Description
Keywords
iii-v semiconductors, magnetic semiconductor, photogenerated carriers, heterostructures, in1-xmnxsb, Physics
Citation
Nontapot, K.; Kini, R. N.; Gifford, A.; et al., "Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films," Appl. Phys. Lett. 90, 143109 (2007); http://dx.doi.org/10.1063/1.2719173