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Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

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dc.contributor.authorMocevic, Slavkoen
dc.contributor.authorYu, Jianghuien
dc.contributor.authorFan, Boranen
dc.contributor.authorSun, Keyaoen
dc.contributor.authorXu, Yueen
dc.contributor.authorStewart, Joshuaen
dc.contributor.authorRong, Yuen
dc.contributor.authorSong, Heen
dc.contributor.authorMitrovic, Vladimiren
dc.contributor.authorYan, Ningen
dc.contributor.authorWang, Junen
dc.contributor.authorCvetkovic, Igoren
dc.contributor.authorBurgos, Rolandoen
dc.contributor.authorBoroyevich, Dushanen
dc.contributor.authorDiMarino, Christinaen
dc.contributor.authorDong, Dongen
dc.contributor.authorMotwani, Jayesh Kumaren
dc.contributor.authorZhang, Richarden
dc.date.accessioned2023-02-22T14:27:53Zen
dc.date.available2023-02-22T14:27:53Zen
dc.date.issued2022-03en
dc.date.updated2023-02-22T02:20:40Zen
dc.description.abstractSimultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gatedriver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Sibased ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper.en
dc.description.versionPublished versionen
dc.format.extentPages 100-113en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.23919/ien.2022.0001en
dc.identifier.eissn2771-9197en
dc.identifier.issn2771-9197en
dc.identifier.issue1en
dc.identifier.orcidBurgos, Rolando [0000-0003-0570-2768]en
dc.identifier.orcidBoroyevich, Dushan [0000-0001-9538-4980]en
dc.identifier.orcidDimarino, Christina [0000-0001-7369-649X]en
dc.identifier.urihttp://hdl.handle.net/10919/113900en
dc.identifier.volume1en
dc.language.isoenen
dc.publisherIEEEen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectSiC MOSFETen
dc.subjectModular multilevel converter (MMC)en
dc.subjectSwitching-cycle control (SCC)en
dc.titleDesign of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converteren
dc.title.serialiEnergyen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/Electrical and Computer Engineeringen
pubs.organisational-group/Virginia Tech/University Distinguished Professorsen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen

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