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Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates

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Date

2012-09-01

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Publisher

AIP Publishing

Abstract

We deposited NaNbO3 (NNO)-Nb2O5 (NO) self-assembled heterostructures on LaAlO3 (LAO) to form ferroelectric-semiconductor vertically integrated nanostructures. The NNO component formed as nanorods embedded in a NO matrix. X-ray diffraction confirmed epitaxial growth of both NNO and NO phases. Phase distribution was detected by scanning electron microscopy. The NNO/NO volume ratio was strongly dependent on the deposition temperature due to the volatility of sodium. Piezoelectric force microscopy revealed a good piezoelectric response in the NNO component with a piezoelectric coefficient of D-33 approximate to 12 pm/V, with SrRuO3 (SRO) acting as bottom electrode. The current-voltage characterization of NNO-NO/SRO-LAO showed a typical diode rectifying behavior. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754713]

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Keywords

Thin films, Nanostructures, Strain, Physics

Citation

Wang, Zhiguang; Li, Yanxi; Chen, Bo; et al., "Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates," Appl. Phys. Lett. 101, 132902 (2012); http://dx.doi.org/10.1063/1.4754713

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http://hdl.handle.net/10919/24948

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Scholarly Works, Materials Science and Engineering (MSE)
Scholarly Works, Center for Energy Harvesting Materials and Systems (CEHMS)