Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates

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dc.contributorVirginia Techen
dc.contributor.authorWang, Zhiguangen
dc.contributor.authorLi, Yanxien
dc.contributor.authorChen, Boen
dc.contributor.authorViswan, Ravindranathen
dc.contributor.authorLi, Jiefangen
dc.contributor.authorViehland, Dwight D.en
dc.contributor.departmentCenter for Energy Harvesting Materials and Systems (CEHMS)en
dc.contributor.departmentMaterials Science and Engineeringen
dc.date.accessed2014-01-10en
dc.date.accessioned2014-01-21T19:28:07Zen
dc.date.available2014-01-21T19:28:07Zen
dc.date.issued2012-09-01en
dc.description.abstractWe deposited NaNbO3 (NNO)-Nb2O5 (NO) self-assembled heterostructures on LaAlO3 (LAO) to form ferroelectric-semiconductor vertically integrated nanostructures. The NNO component formed as nanorods embedded in a NO matrix. X-ray diffraction confirmed epitaxial growth of both NNO and NO phases. Phase distribution was detected by scanning electron microscopy. The NNO/NO volume ratio was strongly dependent on the deposition temperature due to the volatility of sodium. Piezoelectric force microscopy revealed a good piezoelectric response in the NNO component with a piezoelectric coefficient of D-33 approximate to 12 pm/V, with SrRuO3 (SRO) acting as bottom electrode. The current-voltage characterization of NNO-NO/SRO-LAO showed a typical diode rectifying behavior. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754713]en
dc.description.sponsorshipU.S. Department of Energy DE-AC02-98CH10886en
dc.description.sponsorshipOffice of the Air-Force Office of Scientific Research FA9550-09-1-0552en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationWang, Zhiguang; Li, Yanxi; Chen, Bo; et al., "Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substrates," Appl. Phys. Lett. 101, 132902 (2012); http://dx.doi.org/10.1063/1.4754713en
dc.identifier.doihttps://doi.org/10.1063/1.4754713en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/24948en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/101/13/10.1063/1.4754713en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectThin filmsen
dc.subjectNanostructuresen
dc.subjectStrainen
dc.subjectPhysicsen
dc.titleSelf-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substratesen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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